APTC60AM35T1G Allicdata Electronics
Allicdata Part #:

APTC60AM35T1G-ND

Manufacturer Part#:

APTC60AM35T1G

Price: $ 30.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET 2N-CH 600V 72A SP1
More Detail: Mosfet Array 2 N-Channel (Half Bridge) 600V 72A 41...
DataSheet: APTC60AM35T1G datasheetAPTC60AM35T1G Datasheet/PDF
Quantity: 1000
100 +: $ 27.31020
Stock 1000Can Ship Immediately
$ 30.04
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 72A
Rds On (Max) @ Id, Vgs: 35 mOhm @ 72A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Power - Max: 416W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1
Description

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APTC60AM35T1G is a type of transistor array. It is used to increase the power of signal. This device is generally used in the mass production of signal related product. It is mainly used in logic fault analysis.

The transistor array consists of a total of 4 transistors. Each one is a different type of transistor. The first three are N-MOS transistors. The last one is a P-MOS transistor. They are all 300V rated transistors. The breakdown voltage of the first three is 30V while the last one is 40V.

The APTC60AM35T1G transistor array works by using N-MOS transistors to pass large amounts of current from the gate to the drain. This current is then used to amplify the signal coming into the gate. The P-MOS transistor then acts as a buffer and takes the amplified signal from the N-MOS transistors and passes it to the output.

The main applications of the APTC60AM35T1G transistor array include controlling large current loads and amplifying signals. In control systems, the N-MOS transistors can control the current flowing to the load, making for a much more efficient system. The P-MOS transistor can also be used to amplify signals, allowing the device to be used in a wide variety of applications.

The APTC60AM35T1G transistor array is a great device for controlling large current loads and amplifying signals. Its wide variety of applications makes it an attractive device for many design engineers. The array can also be used in logic applications such as fault analysis. Its combination of N-MOS transistors and a P-MOS buffer mean that it can be used in a variety of different systems with ease.

The specific data is subject to PDF, and the above content is for reference

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