AS4C128M16D2-25BIN Allicdata Electronics
Allicdata Part #:

1450-1081-ND

Manufacturer Part#:

AS4C128M16D2-25BIN

Price: $ 9.81
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC DRAM 2G PARALLEL 84FBGA
More Detail: SDRAM - DDR2 Memory IC 2Gb (128M x 16) Parallel 40...
DataSheet: AS4C128M16D2-25BIN datasheetAS4C128M16D2-25BIN Datasheet/PDF
Quantity: 345
1 +: $ 8.91450
10 +: $ 8.25552
25 +: $ 8.14086
50 +: $ 8.04083
162 +: $ 7.04697
324 +: $ 6.74232
648 +: $ 6.69740
Stock 345Can Ship Immediately
$ 9.81
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 2Gb (128M x 16)
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 84-TFBGA
Supplier Device Package: 84-FBGA (10.5x13.5)
Description

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Memory: AS4C128M16D2-25BIN Application Field And Working Principle

AS4C128M16D2-25BIN is a type of advanced low-power, high speed synchronous dynamic random access memory (SDRAM). It belongs to the latest technology of double data rate three synchronous dynamic random access memory (DDR3 SDRAM) type, a kind of random access memory (RAM). The AS4C128M16D2-25BIN is capable of storing up to 128 megabytes (MB) of data and runs on clock speeds of 25 megahertz (MHz).

The AS4C128M16D2-25BIN can be used in a wide range of applications ranging from desktop computing, laptops and personal computers (PCs), to mobile devices, servers and other embedded systems. It is ideal for applications requiring high performance, low power and long term reliability.

Application Field

The AS4C128M16D2-25BIN is mainly used in desktops, laptops, personal computers, mobile devices, servers and other embedded systems. It is the ideal choice for applications where increased amounts of data needs to be stored, processed and accessed at high speeds. The AS4C128M16D2-25BIN has been optimized to ensure maximum performance and efficiency with low power consumption. Its features include a two-unit high-speed synchronous burst access (SBA) mode, a serial clock frequency of up to 200MHz and an 8-bit serial data input/output (I/O).

The AS4C128M16D2-25BIN is also an excellent choice for applications requiring high speed and low power consumption. Its on-chip automatic power-down feature allows the user to save power when idle, allowing for increased battery life in mobile devices. It also supports thermal sensing and programmable alert modes, allowing the processor to take measures to prevent overheating. In addition, the AS4C128M16D2-25BIN is backward compatible with previous SDRAM and DDR2 technologies, allowing the user to upgrade easily.

Working Principle

The AS4C128M16D2-25BIN uses a synchronous dynamic random access memory (SDRAM) architecture. This design uses multiple memory cells that are organized into rows and columns. Each memory cell consists of a capacitor and a transistor, allowing data to be stored in the capacitor, and read or written to the cell by a controller. The controller is responsible for reading and writing data to the memory cells.

The AS4C128M16D2-25BIN has two main modes of operation - a synchronous burst access (SBA) mode and a serial clock frequency data output (SCFO) mode. In the SBA mode, the controller sends out an address signal to the memory cells and the appropriate data is read or written. In the SCFO mode, the controller sends out a clock signal along with data signals to the memory cells, and the data is read or written accordingly.

The AS4C128M16D2-25BIN uses a double data rate three synchronous dynamic random access memory (DDR3 SDRAM) type, allowing data to be transferred at higher speeds than regular SDRAM. This memory type also has a low power consumption, allowing the user to save power when idle, and provides increased reliability, allowing the user to upgrade easily.

Conclusion

In conclusion, the AS4C128M16D2-25BIN is an ideal choice for high performance, low power applications. It is capable of storing up to 128MB of data and runs at clock speeds of up to 25MHz. The on-chip automatic power down feature allows for increased battery life in mobile devices, and its backward compatibility with previous SDRAM and DDR2 technologies allows the user to upgrade easily. It is also an excellent choice for applications requiring high speed and low power consumption.

The specific data is subject to PDF, and the above content is for reference

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