AS4C16M16D1A-5TCN Allicdata Electronics
Allicdata Part #:

1450-1281-ND

Manufacturer Part#:

AS4C16M16D1A-5TCN

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC DRAM 256M PARALLEL 66TSOP II
More Detail: SDRAM - DDR Memory IC 256Mb (16M x 16) Parallel 20...
DataSheet: AS4C16M16D1A-5TCN datasheetAS4C16M16D1A-5TCN Datasheet/PDF
Quantity: 299
Stock 299Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 256Mb (16M x 16)
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Memory Interface: Parallel
Voltage - Supply: 2.3 V ~ 2.7 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Supplier Device Package: 66-TSOP II
Description

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Memory products are the crucial component in modern everyday technologies such as personal computers, gaming consoles and smart phones. The AS4C16M16D1A-5TCN is a type of dynamic random-access storage (DRAM) product manufactured by Alliance Memory Inc. It is based on the company’s existing 16Mb DDR1 SDRAM memory devices but features a small footprint, 1.8V operating voltage, an industrial temperature range and 2.40GHz data rate. Its small package size and power consumption makes it suitable for applications like netbooks, tablets and embedded systems.

The AS4C16M16D1A-5TCN is a 1.8V 72pin SO-DIMM (small outline dual in-line memory module) DRAM that is ideal for a variety of applications, including low-power consumer electronics and embedded applications. The module has two 2GB banks and can hold up to 2GB of data. The device operates on 200MHz and features a burst read/write data rate of up to 2.4GHz. It is available in 400-pin FBGA (fine-pitch ball grid array) packages. The device operates on a 1.5V supply voltage, which makes it ideal for battery-powered applications.

The AS4C16M16D1A-5TCN is an advanced memory device that provides high-speed data access. It leverages the latest DDR SDRAM technology to offer increased speed, higher energy efficiency and improved reliability. The device is compatible with JEDEC-compliant motherboards and supports a wide range of operating systems, including Windows, Mac OS X and Linux.

The working principle of the AS4C16M16D1A-5TCN is based on the DDR SDRAM architecture. This architecture enables faster data transfers by providing a dedicated bank for each bit of information. Each bit, or “cell,” is divided into four storage cells and is accessible via four parallel data ports. Data can be stored in cells in either random or serial order. The four ports are then accessed in either sequential or round-robin order. This feature helps reduce power consumption without sacrificing performance.

The AS4C16M16D1A-5TCN has a 1.8V operating voltage, making it ideal for battery-powered applications. This allows the device to be used in applications where power consumption is an issue. It also supports error correction code (ECC) to help reduce the possibility of data errors. Its small footprint makes it suitable for devices with limited space while its high-speed data accesses give it a high performance.

The AS4C16M16D1A-5TCN is a great memory device for applications that require a reliable and high-speed performance. Its small package size and low power consumption make it ideal for use in battery-powered applications. Its ECC feature helps to reduce errors in data and its high data transfer rate makes it suitable for use in a variety of applications. The device’s small footprint ensures that it fits into most applications with limited space.

The specific data is subject to PDF, and the above content is for reference

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