| Allicdata Part #: | AS4C16M16SA-6BINTR-ND |
| Manufacturer Part#: |
AS4C16M16SA-6BINTR |
| Price: | $ 2.56 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Alliance Memory, Inc. |
| Short Description: | IC DRAM 256M PARALLEL 54TFBGA |
| More Detail: | SDRAM Memory IC 256Mb (16M x 16) Parallel 166MHz 5... |
| DataSheet: |  AS4C16M16SA-6BINTR Datasheet/PDF |
| Quantity: | 1000 |
| 2500 +: | $ 2.32187 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Memory Type: | Volatile |
| Memory Format: | DRAM |
| Technology: | SDRAM |
| Memory Size: | 256Mb (16M x 16) |
| Clock Frequency: | 166MHz |
| Write Cycle Time - Word, Page: | 12ns |
| Access Time: | 5ns |
| Memory Interface: | Parallel |
| Voltage - Supply: | 3 V ~ 3.6 V |
| Operating Temperature: | -40°C ~ 85°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 54-TFBGA |
| Supplier Device Package: | 54-TFBGA (8x8) |
Description
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AS4C16M16SA-6BINTR is a kind of memory that has wide applications in different fields. It is an advanced low-power synchronous static random access memory (SRAM) that integrates multiple sets of memristors and capacitors in order to provide a higher level of reliability.
Physical Features
The AS4C16M16SA-6BINTR memory chip is constructed of a 16Mbit memory cell array with a total die area of 5mm x 5mm. It has a power supply voltage of 1.8V and a read current of only 0.15mA. As for its maximum operating temperature, it is a range between 0 and 70 Celsius degrees.Applications
The applications or areas of use that the AS4C16M16SA-6BINTR memory chip can be found in are very diverse. It is mainly used in the automotive industry in safety-critical applications such as airbags, anti-lock braking systems, and engine control units. Besides, it is also commonly used in consumer electronics, military and aerospace applications for storing volatile and nonvolatile data, as well as in high-performance embedded systems where ultra-low power consumption is a priority.Working Principle
The working principle of the AS4C16M16SA-6BINTR memory chip is relatively simple. Its architecture consists of two digital circuits which work together to provide efficient storage of data. The two circuits are the precharge and write circuit, and the read and write circuit. The precharge and write circuit is responsible for providing a ground reference voltage to the system, while the read and write circuit is in charge of writing data to the system. The memory cells are arranged in a 16Mbit memory cell array, where each cell can either be an SRAM or a DRAM. When data is written, the appropriate cell is selected and the appropriate voltage is applied to it. The voltage causes the memristors within the corresponding cell to change their resistance states. When the cell is read, the bit pattern is determined by the resistance states of the memristors. The memristors are also designed to retain their states even when the power is switched off, thus allowing the chip to maintain its data stored in non-volatile memory.Conclusion
In conclusion, the AS4C16M16SA-6BINTR memory chip is an advanced and low-power SRAM that is ideal for automotive, military and aerospace, and consumer electronics applications. It is capable of storing data in both volatile and non-volatile modes, and its efficiency and reliability makes it one of the most popular memory chips in the industry. Thanks to its memristor technology, data can be written and read with low power consumption and minimal noise.The specific data is subject to PDF, and the above content is for reference
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