AS4C16M16SA-7BCN Allicdata Electronics
Allicdata Part #:

1450-1254-ND

Manufacturer Part#:

AS4C16M16SA-7BCN

Price: $ 3.55
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC DRAM 256M PARALLEL 54TFBGA
More Detail: SDRAM Memory IC 256Mb (16M x 16) Parallel 143MHz 5...
DataSheet: AS4C16M16SA-7BCN datasheetAS4C16M16SA-7BCN Datasheet/PDF
Quantity: 454
1 +: $ 3.22560
10 +: $ 2.92572
25 +: $ 2.86247
50 +: $ 2.84659
100 +: $ 2.55289
348 +: $ 2.54334
696 +: $ 2.44966
1044 +: $ 2.32901
Stock 454Can Ship Immediately
$ 3.55
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 256Mb (16M x 16)
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: 14ns
Access Time: 5.4ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TFBGA
Supplier Device Package: 54-TFBGA (8x8)
Description

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AS4C16M16SA-7BCN application field and working principle

AS4C16M16SA-7BCN is a synchronous dynamic RAM (SDRAM) manufactured by Alliance Semiconductor Corporation. It is a type of semiconductor memory that contains a finite number of cells, each of which stores a bit of data, allowing the stored data to be accessed and managed at very high speed. With its high speed, fast data retrieval and low power consumption, SDRAMs have become an ideal choice for memory applications in a variety of digital devices and systems.

Features

The AS4C16M16SA-7BCN SDRAM is available in SOP and BGA packages and has an operating voltage rating of 3.3V. It employs an asynchronous bus control interface that allows the device to work with any microprocessor with a 16-bit data bus. It has a maximum clock frequency of 200MHz, a minimum cycle time of 5ns, and a burst length of 8 words. It also features a number of built-in error detection and correction algorithms to ensure reliable operation.

Applications

The AS4C16M16SA-7BCN is suitable for a variety of memory applications ranging from embedded systems and consumer electronics to high-end computing and networking systems. In addition, it can be used in military and avionics systems, as well as automotive and medical applications. The device requires minimal management and is ideal for use in compact systems where space is a constraint.

Working Principle

An SDRAM such as the AS4C16M16SA-7BCN is organized as an array of memory cells arranged in rows and columns. Each row is capable of storing one data word, while each column can hold one or more words. The device is addressed by row and column coordinates, and data can be read from or written to a memory cell by specifying its location within the array. Accessing a single cell takes less than 10ns.The AS4C16M16SA-7BCN utilizes a burst architecture that allows multiple locations to be accessed in rapid succession. The device also supports a pipelined mode of operation that allows consecutive memory accesses to be made more quickly than would otherwise be possible.

Conclusion

The AS4C16M16SA-7BCN is a high-performance SDRAM that is suitable for embedded and consumer applications where high speed and low power consumption are required. It offers a fast data retrieval time and a range of error detection and correction algorithms for reliable operation. This makes it an ideal choice for memory applications in a variety of digital devices and systems.

The specific data is subject to PDF, and the above content is for reference

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