AS4C16M16SA-7TCN Allicdata Electronics
Allicdata Part #:

1450-1255-ND

Manufacturer Part#:

AS4C16M16SA-7TCN

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC DRAM 256M PARALLEL 54TSOP
More Detail: SDRAM Memory IC 256Mb (16M x 16) Parallel 143MHz 5...
DataSheet: AS4C16M16SA-7TCN datasheetAS4C16M16SA-7TCN Datasheet/PDF
Quantity: 16615
Stock 16615Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 256Mb (16M x 16)
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: 14ns
Access Time: 5.4ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

AS4C16M16SA-7TCN is a 4G DDR3 DRAM component by Alliance Memory that is used in various applications. It has 16M addresses, organised in 512 rows and 512 columns. This component offers a high density component and a high speed data access rate, characteristics that render it suitable for a wide range of applications, such as servers, storage systems and digital appliances. Its main features include its low operating voltage, high data rate, low power consumption and its robust ECC (Error Correcting Code), which enhance its reliability and data processing capabilities.

Indeed, the AS4C16M16SA-7TCN is one of the most popular memory components on the market. Its most significant feature is the ability to accept multiple, simultaneous commands from different read or write sources, making it an ideal choice for a wide range of applications. It can handle data rates up to 1.6 Gbps and is capable of operating at temperatures up to 125°C. Its low power consumption makes it a great choice for low-power applications.

The working principle behind the AS4C16M16SA-7TCN is based on its ability to store data in its memory cells at various locations and to read and write data to and from those cells with an appropriate voltage applied. The component employs a sophisticated row and column addressing scheme, which allows it to store data in a variety of formats and to access it quickly and efficiently. The addresses used to access the memory cells are known as "row addresses" and "column addresses".

Data can be written to the AS4C16M16SA-7TCN in various ways, such as an "ROP" (reset on power) cycle, which is writes all zero data to the entire memory system, or a standardized programming cycle. Likewise, the component can be read in different ways, such as an "SHL" (shuffle reads) or an "RL" (read-latch) cycle. It can also be used to perform byte-wide accesses and random accesses. Each of these accesses has its own set of commands that the component can accept and use to perform the read or write function.

In the end, the AS4C16M16SA-7TCN is a highly reliable memory component that can be used in a wide range of applications. Its high data rate, low power consumption and robust error-correcting code make it a popular choice for applications that require reliable operation in extreme environments. It allows for easy programming and access times, making it an attractive solution for many applications as well.

The specific data is subject to PDF, and the above content is for reference

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