Allicdata Part #: | AS4C1M16S-7TCNTR-ND |
Manufacturer Part#: |
AS4C1M16S-7TCNTR |
Price: | $ 0.98 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Alliance Memory, Inc. |
Short Description: | IC DRAM 16M PARALLEL 50TSOP II |
More Detail: | SDRAM Memory IC 16Mb (1M x 16) Parallel 143MHz 5.4... |
DataSheet: | AS4C1M16S-7TCNTR Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.89065 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM |
Memory Size: | 16Mb (1M x 16) |
Clock Frequency: | 143MHz |
Write Cycle Time - Word, Page: | 2ns |
Access Time: | 5.4ns |
Memory Interface: | Parallel |
Voltage - Supply: | 3 V ~ 3.6 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 50-TSOP (0.400", 10.16mm Width) |
Supplier Device Package: | 50-TSOP II |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Today, with the development of modern technology, more and more electronic devices rely on the support of memory, whether it is a computer, electronic games, digital cameras, etc. Memory plays an important role in these applications.
AS4C1M16S-7TCNTR is a type of memory product that plays an important role in a variety of electronic systems. It belongs to the memory industry, and its design is a type of synchronous dynamic random access memory (SDRAM).
The AS4C1M16S-7TCNTR is mainly used in computers, mobile phones, digital cameras, game consoles and other products, and can provide an optimized solution. This memory product is available in a variety of densities to meet different system requirements and provide customers with the best options.
The AS4C1M16S-7TCNTR memory product is a DDR3 SDRAM, which is mainly divided into two categories: asynchronous burst extended and synchronous burst extended. In order to meet the requirements of modern computational power, some new technologies have also been introduced, such as the embedded burst counters, read/write latency, deep power down and temperature compensation, to ensure that the product can support high-speed operation.
In addition, this memory product is equipped with an advanced architecture to reduce power consumption and improve data-processing speed. The advanced architecture works in conjunction with on-die termination to ensure superior signal integrity. The symbol rate for this device is up to 1600 Mb / s and the voltage ranges from 1.2 to 1.65V.
AS4C1M16S-7TCNTR works on the basis of the synchronous dynamic random access memory (SDRAM) principle, which is a technology that uses parallel access to rapidly store and access data. Processor request and address signals are used to access blocks of data in a set order, in sequence, with a frequency of up to 1600 MHz.
The working principle is mainly divided into four cycles: precharge, activate, read/write, and auto-refresh. During each cycle, memory transistors are connected in pairs, forming a dynamic circuit that is constantly renewed to recharge the address line. This mechanism enables the data line to sustain for a certain period of time, so that the data can be read and written accurately.
In addition, this memory product also uses advanced detection technology to detect errors in the memory data. The built-in error correction code can detect and correct up to one bit of data in every 8 bits of data written. The error correction code is designed to improve data reliability and protect the data written to the memory.
In summary, the AS4C1M16S-7TCNTR memory product is widely used in computers, mobile phones, digital cameras, game consoles and other products, and can provide an optimized solution. It has a variety of densities to meet different system requirements, an advanced architecture to reduce power consumption and improve data-processing speed, and an error correction code to improve data reliability. The working principle is based on the synchronous dynamic random access memory (SDRAM), and the symbol rate can reach up to 1600 MHz.
The specific data is subject to PDF, and the above content is for reference
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AS4C128M16D3LA-12BIN | Alliance Mem... | -- | 1000 | IC DRAM 2G PARALLEL 96FBG... |
AS4C128M16D3LA-12BAN | Alliance Mem... | 5.96 $ | 237 | IC DRAM 2G PARALLEL 96FBG... |
AS4C512M8D3L-12BCN | Alliance Mem... | 6.28 $ | 198 | IC DRAM 4G PARALLEL 78FBG... |
AS4C512M8D3LA-12BCN | Alliance Mem... | 7.57 $ | 220 | IC DRAM 4G PARALLEL 78FBG... |
AS4C512M8D3A-12BCN | Alliance Mem... | 7.57 $ | 190 | IC DRAM 4G PARALLEL 78FBG... |
AS4C512M8D3A-12BAN | Alliance Mem... | 9.42 $ | 216 | IC DRAM 4G PARALLEL 78FBG... |
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