Allicdata Part #: | 1450-1283-ND |
Manufacturer Part#: |
AS4C2M32SA-6TCN |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Alliance Memory, Inc. |
Short Description: | IC DRAM 64M PARALLEL 86TSOP II |
More Detail: | SDRAM Memory IC 64Mb (2M x 32) Parallel 166MHz 5.5... |
DataSheet: | AS4C2M32SA-6TCN Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM |
Memory Size: | 64Mb (2M x 32) |
Clock Frequency: | 166MHz |
Write Cycle Time - Word, Page: | 2ns |
Access Time: | 5.5ns |
Memory Interface: | Parallel |
Voltage - Supply: | 3 V ~ 3.6 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 86-TFSOP (0.400", 10.16mm Width) |
Supplier Device Package: | 86-TSOP II |
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The AS4C2M32SA-6TCN is an integrated circuit (IC) that is part of the larger family of synchronous, high-speed Static Random Access Memory (SRAM). It belongs to a class of devices known as low-power SRAM and is specially designed for applications such as active caching and data buffering, as well as intended for use in mobile and embedded systems, as well as high-end desktop/server CPUs.
The AS4C2M32SA-6TCN integrates four M32 × 16 wordblocks in a single package and features an industry-standard pinout for easy integration and compatibility with legacy designs. It is available in a variety of operating temperature ranges, from 0°C to 85°C, and provides multiple power-saving modes, including high-speed clock control and self-refresh mode, to reduce power consumption and maximize computing performance.
The AS4C2M32SA-6TCN offers different timings, including fast-write, write and read, to enable asynchronous read and write operations. It also provides an on-chip auto tristate which ensures that the output buffers are always disabled, eliminating the need for manual control and saving power. In terms of performance, the AS4C2M32SA-6TCN can access a maximum of 8M bytes of data within 2.4ns read and 8.4ns write times, delivering up to 16-megabyte per second (MBps) data rates.
The AS4C2M32SA-6TCN\'s writing process is arguably one of the most important features of SRAM. It works with the input signals to produce logic ones and zeros to write data into memory cells. This process is done by passing a power signal to the wordline hence flips the stored bits within the memory cells. This means that when writing data, the wordline (or word or bitline) makes an electrical connection with each output address, allowing the write data to be transferred and stored in the memory cells. When reading, the wordline merely passes data between the address lines and the memory cells, thus retrieving the stored data.
The AS4C2M32SA-6TCN is designed to be a highly reliable and efficient on-chip memory solution. Its use of single-vcc supply, low power consumption and excellent latency reduces design and power costs, while its enhanced diagnostic support and integrated built-in self-test (BIST) facilitate manufacturing testing. Moreover, its excellent performance-per-watt ratio maximizes system performance.
Given its features, the AS4C2M32SA-6TCN is ideal for embedded applications that require short access times, such as streaming media and battery-powered systems that require low power consumption and high-performance memory. Its low standby power and excellent reliability make it suitable for mission-critical systems as well. It is also an ideal solution for data buffering, as well as storage applications that require a substantial amount of data but have limited space.
In summation, the AS4C2M32SA-6TCN is a unique and innovative memory IC that integrates the latest technologies to provide outstanding performance and reliability. Its energy-efficient modes make it ideal for small-space footprints, low-power applications and battery-powered systems; while its excellent diagnostic support and BIST ensure robust system performance. Overall, the AS4C2M32SA-6TCN is a must-have memory solution for mission-critical applications and streaming media.
The specific data is subject to PDF, and the above content is for reference
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