AS4C32M16D2A-25BIN

Series:	--
Packaging:	Tray
Part Status:	Active
Memory Type:	Volatile
Memory Format:	DRAM
Technology:	SDRAM - DDR2
Memory Size:	512Mb (32M x 16)
Clock Frequency:	400MHz
Write Cycle Time - Word, Page:	15ns
Access Time:	400ps
Memory Interface:	Parallel
Voltage - Supply:	1.7 V ~ 1.9 V
Operating Temperature:	-40°C ~ 95°C (TC)
Mounting Type:	Surface Mount
Package / Case:	84-TFBGA
Supplier Device Package:	84-FBGA (8x12.5)

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Memory: AS4C32M16D2A-25BIN Application Field and Working Principle

Memory technology has not only paved the way for the rapid increase and transformation of modern computer technology, but also enabled the development of large-scale mobile applications. The integration of memory elements on a single chip has become a major trend in modern technology.AS4C32M16D2A-25BIN is a high-speed CMOS Synchronous SRAM chip designed by the Korean-American semiconductor company ROHM. It is used for high-speed operations such as frame buffers and image processing applications.The AS4C32M16D2A-25BIN is pin compatible with other devices and can be used to replace other devices used in applications such as general-purpose memory, cache memory and special-purpose computers. It is available in different package varieties.It consists of a 32 megabit array (4,194,304 words) array of 16-bit words organized as 512K rows and 64K columns. The active address space consists of 4 bytes per word: the first byte is an unused word, the second byte is a READ-Write input, the third byte is a read-output and the fourth byte is a write-output.As far as power consumption is concerned, the AS4C32M16D2A-25BIN consumes a maximum of 0.9W at a supply voltage of +3.3V and a maximum frequency of 133 MHz. This power consumption is much lower than memory devices operating on older designs.The AS4C32M16D2A-25BIN is built with a fail-safe data retention voltage range from +1.5V to +3.3V, guaranteeing operation even if there is a supply voltage fluctuation. This feature ensures sufficient data retention even in the event of unexpected power shutdowns.The AS4C32M16D2A-25BIN consists of an array of two levels of CMOS transistors that act as data storage elements. In these transistors, the charge is stored in the form of holes or free electrons. The two levels are divided into an ‘on’ and an ‘off’ state. The charge can be changed based on the data stored.When a read/write cycle is called, the data stored in the memory array is accessed, read and written. To write data to the array, the write enable input is applied (HIGH) to enable the write operation. Writing data to the device requires a higher voltage than reading data from it.In the read cycle, the device reads content from an address and transfers it to an external buffer. To read data from the array, the READ input is applied (HIGH) to allow reading of the address contents and the data is forwarded to an external buffer.The AS4C32M16D2A-25BIN is a reliable and high-speed memory solution designed to meet the needs of applications such as image processing and frame buffer operations. The device is easy to use and is built with power-saving features. This device is suitable for applications in which long data retention is required.

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