Allicdata Part #: | 1450-1384-ND |
Manufacturer Part#: |
AS4C32M16SB-7TIN |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Alliance Memory, Inc. |
Short Description: | IC DRAM 512M PARALLEL 54TSOP |
More Detail: | SDRAM Memory IC 512Mb (32M x 16) Parallel 143MHz 5... |
DataSheet: | AS4C32M16SB-7TIN Datasheet/PDF |
Quantity: | 1656 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM |
Memory Size: | 512Mb (32M x 16) |
Clock Frequency: | 143MHz |
Write Cycle Time - Word, Page: | 14ns |
Access Time: | 5.4ns |
Memory Interface: | Parallel |
Voltage - Supply: | 3 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 54-TSOP (0.400", 10.16mm Width) |
Supplier Device Package: | 54-TSOP II |
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AS4C32M16SB-7TIN is a type of static random-access memory (SRAM), which is a type of non-volatile random-access memory. SRAM is a popular and widely used form of memory due to its fast access times, low power consumption and reliability. The AS4C32M16SB-7TIN is a high-performance SRAM, optimized for use in applications such as industrial automation, automotive, medical, and consumer electronics.
The AS4C32M16SB-7TIN SRAM is organized in a 32Mbit x 16 organization and is manufactured on Toshiba’s advanced process technology. This allows it to operate at low power consumption while providing excellent access times. This particular SRAM operates in a wide voltage range of 1.3V to 5.5V, and is also compatible with a broad temperature range from -40°C to +85°C.
The AS4C32M16SB-7TIN SRAM has a dedicated power-saving mode as well as a sleep mode, allowing for a wide range of power saving applications and an exceptionally long battery life for small portable devices. This SRAM also has a built-in self-refresh capability, allowing it to automatically refresh the memory array at intervals indicated by the user.
The AS4C32M16SB-7TIN SRAM has a burst-read capability, allowing data to be read from multiple memory locations in a single clock cycle. This allows the device to access data quicker than regular random access memory, and makes it ideal for applications that require high-speed data operations. The SRAM also comes with an Error Correction Code (ECC) feature that helps prevent data corruption.
In terms of timing, the AS4C32M16SB-7TIN SRAM has a fast page-mode access time of 6ns and an asynchronous access time of 15ns. It also features a self-timed write feature, allowing for both read and write operations to be carried out simultaneously. This makes it suitable for applications that require low latency operation. The SRAM also has an internal test mode, allowing for the device to be tested at the production stage.
The AS4C32M16SB-7TIN SRAM is a highly reliable, high-performance memory device making it suitable for a wide variety of applications. It is easy to use, highly flexible, and provides users with great value for money. The SRAM is able to operate in both low and high temperatures, and has a range of features that make it ideal for modern memory applications. It is also very power efficient, making it a great choice for devices that require long battery life.
The specific data is subject to PDF, and the above content is for reference
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