AS4C4M16SA-6TIN Allicdata Electronics
Allicdata Part #:

1450-1260-ND

Manufacturer Part#:

AS4C4M16SA-6TIN

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC DRAM 64M PARALLEL 54TSOP
More Detail: SDRAM Memory IC 64Mb (4M x 16) Parallel 166MHz 5.4...
DataSheet: AS4C4M16SA-6TIN datasheetAS4C4M16SA-6TIN Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 64Mb (4M x 16)
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 2ns
Access Time: 5.4ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II
Description

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AS4C4M16SA-6TIN is a type of dynamic random access memory (DRAM) device from Alliance Memory. It is a 4Mb memory device that is organized as 524,288 words by 16 bits. It is housed in a very small 19-mm, 128-ball FBGA package, only 9.5 mm x 10.75 mm x 1.0 mm in size. This makes the AS4C4M16SA-6TIN suitable for a variety of shrink-module applications.

The AS4C4M16SA-6TIN is an asynchronous device, which means it does not require an external clock signal and can operate at a range of frequencies, making it suitable for designs with tight power and cost constraints. It is also designed to operate in a low-voltage environment, requiring only a single VDD power supply to operate at a voltage as low as 1.8V, while VDDQ can operate as low as 1.65V.

The AS4C4M16SA-6TIN is a fast-separate device, meaning it uses two separate power supplies, VDD and VDDQ, to enable reduced power consumption and operation at a higher speed. VDDQ is used for the output signals, which are different from the I/O signals used for input/output that are driven by VDD. This enables the device to operate at higher speeds since the voltage of the output signals can be increased without increasing the voltage of the I/O signals, thereby reducing their resistance.

The AS4C4M16SA-6TIN is built using an advanced low-power process technology. It is an SDRAM device, meaning it has the ability to refresh itself by automatically reloading its own programmable settings, including the refresh frequency, which is user programmable. This enables the device to maintain its own state and to decrease its power consumption.

The AS4C4M16SA-6TIN is also designed with a built-in self-refresh mode. This mode enables the device to enter into a low-power state, while still providing its functionality with minimal interference. This feature is especially useful for mobile devices, where power is at a premium and extended battery life is desired.

The AS4C4M16SA-6TIN is an ideal memory solution for systems that need a low-power, small-footprint device that can deliver high-speed operation and large capacity. And since it is an asynchronous device, it can be easily used with a wide range of operating frequencies. It is ideal for applications such as personal media players, GPS units, PDAs, mobile phones, and consumer electronics.

The specific data is subject to PDF, and the above content is for reference

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