AS4C4M32SA-6TIN Allicdata Electronics
Allicdata Part #:

1450-1293-ND

Manufacturer Part#:

AS4C4M32SA-6TIN

Price: $ 3.77
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC DRAM 128M PARALLEL 86TSOP II
More Detail: SDRAM Memory IC 128Mb (4M x 32) Parallel 166MHz 5....
DataSheet: AS4C4M32SA-6TIN datasheetAS4C4M32SA-6TIN Datasheet/PDF
Quantity: 429
1 +: $ 3.42720
10 +: $ 3.12921
25 +: $ 3.06936
50 +: $ 3.04844
108 +: $ 2.73467
324 +: $ 2.72413
540 +: $ 2.55409
1080 +: $ 2.44539
Stock 429Can Ship Immediately
$ 3.77
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 128Mb (4M x 32)
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 2ns
Access Time: 5.4ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 86-TFSOP (0.400", 10.16mm Width)
Supplier Device Package: 86-TSOP II
Description

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AS4C4M32SA-6TIN (Advanced Self-Refresh 4 Meg x 32 Synchronous DRAM) is a type of synchronous dynamic random access memory, or Synchronous DRAM (SDRAM). It is a type of dynamic random access memory (DRAM) that synchronizes itself to a clock signal. This type of memory is used in many applications such as engineering, communications, industrial automation, robotics, medical, and consumer electronics.

The AS4C4M32SA-6TIN is an advanced self-refresh type of SDRAM that is capable of performing multiple operations at once. It is capable of handling higher data rates than other types of DRAM and is capable of completing multiple operations at once. This type of memory has several advantages over other types of SDRAM. First, it is capable of providing faster clock speeds and faster data rates than other types of SDRAM, making it ideal for high performance applications. Second, it can be used in a wide variety of applications because of its ability to handle high data rates and high clock speeds. Third, it is capable of delivering lower power requirements and lower latency times than other types of DRAM.

The AS4C4M32SA-6TIN is able to provide high performance in a wide variety of applications because of its advanced self-refresh design. This design allows the memory to automatically refresh itself during idle cycles, allowing for higher data rates and lower latency times. Additionally, the self-refreshing design also helps to reduce power consumption. One of the primary advantages of this type of memory is its ability to deliver higher bandwidth than other types of DRAM, allowing for faster performance in a wide range of applications.

The working principle of the AS4C4M32SA-6TIN works by using a clock signal to synchronize the refresh process of the memory. A signal is sent to the memory to refresh its contents. The contents of the memory are then refreshed and stored until the next clock signal arrives. The data is then read from the memory and transferred to its destination.

The AS4C4M32SA-6TIN can be used in a wide variety of applications due to its high performance capabilities. It can be used in applications such as engineering, communications, industrial automation, robotics, medical, and consumer electronics. It is often used in high performance computing and gaming applications because of its high data rate capabilities. Additionally, it can be used in applications such as natural language processing and digital signal processing.

In conclusion, the AS4C4M32SA-6TIN is a type of synchronous dynamic random access memory (SDRAM). It is an advanced self-refresh type of SDRAM that is capable of providing higher data rates and lower latency times than other types of SDRAM. It has a high performance capability and can be used in a wide variety of applications. Additionally, its working principle works by using a clock signal to synchronize the refresh process of the memory, allowing for faster performance in a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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