Allicdata Part #: | 1450-1271-ND |
Manufacturer Part#: |
AS4C512M16D3L-12BCN |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Alliance Memory, Inc. |
Short Description: | IC DRAM 8G PARALLEL 96FBGA |
More Detail: | SDRAM - DDR3L Memory IC 8Gb (512M x 16) Parallel 8... |
DataSheet: | AS4C512M16D3L-12BCN Datasheet/PDF |
Quantity: | 660 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - DDR3L |
Memory Size: | 8Gb (512M x 16) |
Clock Frequency: | 800MHz |
Write Cycle Time - Word, Page: | 15ns |
Access Time: | 13.75ns |
Memory Interface: | Parallel |
Voltage - Supply: | 1.283 V ~ 1.45 V |
Operating Temperature: | 0°C ~ 95°C (TC) |
Mounting Type: | Surface Mount |
Package / Case: | 96-TFBGA |
Supplier Device Package: | 96-FBGA (14x9) |
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Memory integrated circuits are essential components of modern electronics. AS4C512M16D3L-12BCN is a high-performance integrated circuit, which is commonly used in memory applications. It is a Double Data Rate 3 (DDR3) device and is made up of 512 megabits (Mb) of Single Data Rate (SDR) synchronous DRAM. This article will discuss the application field and working principle of the AS4C512M16D3L-12BCN memory integrated circuit.
AS4C512M16D3L-12BCN is used in many applications that require high speed data and reliable storage. Common applications include medical devices, set-top boxes, industrial control systems, digital signage and embedded systems. This chip is designed to be used in a wide range of mobile and embedded devices, such as smartphones, tablets and wearable devices. It is also used in gaming consoles and video cards. The device features low power consumption, high speeds, and low voltage operation, making it ideal for use in many applications.
The AS4C512M16D3L-12BCN operates in a very similar way to other DRAM devices. It is made up of a large array of DRAM cells, each of which contain a single storage element. When voltage is applied to the chip, each of the cells is energized and they can be used to store data. The chip is arranged into “banks” of cells, and each bank is connected to the pins on the integrated circuit. Data is transferred to and from the chip via the pins, at speeds of up to 2133 data transfers per second.
The AS4C512M16D3L-12BCN is designed with a number of features to optimize performance. The chip leverages technologies such as DDR3 Burst Length and On Die Termination (ODT) to improve speed and reduce power consumption. The chip also implements Advanced Thermal Monitoring (ATM) technology to ensure that it does not overheat during high speed operations. The chip is designed to run on 1.35V supply voltage to ensure energy efficiency, and can be operated at temperatures of up to 85°C.
The AS4C512M16D3L-12BCN is an advanced, high-performance memory integrated circuit. It offers high speeds, low power consumption and advanced thermal monitoring to ensure reliable performance when used in many applications. The device is well suited to embedded, mobile and gaming applications and is a reliable choice for those looking for a reliable and cost-effective memory solution.
The specific data is subject to PDF, and the above content is for reference
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AS4C128M8D3A-12BCN | Alliance Mem... | 3.33 $ | 85 | IC DRAM 1G PARALLEL 78FBG... |
AS4C64M16D3LA-12BCN | Alliance Mem... | 3.4 $ | 83 | IC DRAM 1G PARALLEL 96FBG... |
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AS4C128M16D3A-12BCN | Alliance Mem... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 96FBG... |
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AS4C128M16D3LA-12BAN | Alliance Mem... | 5.96 $ | 237 | IC DRAM 2G PARALLEL 96FBG... |
AS4C512M8D3L-12BCN | Alliance Mem... | 6.28 $ | 198 | IC DRAM 4G PARALLEL 78FBG... |
AS4C512M8D3LA-12BCN | Alliance Mem... | 7.57 $ | 220 | IC DRAM 4G PARALLEL 78FBG... |
AS4C512M8D3A-12BCN | Alliance Mem... | 7.57 $ | 190 | IC DRAM 4G PARALLEL 78FBG... |
AS4C512M8D3A-12BAN | Alliance Mem... | 9.42 $ | 216 | IC DRAM 4G PARALLEL 78FBG... |
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