AS4C64M16D1A-6TCN

Series:	--
Packaging:	Bulk
Part Status:	Active
Memory Type:	Volatile
Memory Format:	DRAM
Technology:	SDRAM - DDR
Memory Size:	1Gb (64M x 16)
Clock Frequency:	166MHz
Write Cycle Time - Word, Page:	15ns
Access Time:	700ps
Memory Interface:	Parallel
Voltage - Supply:	2.3 V ~ 2.7 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	66-TSSOP (0.400", 10.16mm Width)
Supplier Device Package:	66-TSOP II

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Memory is an important part of modern computer architecture. It is used to store data and instructions. Memory also provides fast read and write speeds. As such, memory is critical for the efficient operation of today\'s computers.The AS4C64M16D1A-6TCN is a type of memory device. It is a high performance dynamic random-access memory (DRAM) that is based on an Advanced fast-cycle Multi-bank architecture. This memory device is a 16 megabit (Mb) device that has an Interface that is based on the industry-standard 6T (SDRAM) technology.The AS4C64M16D1A-6TCN has several unique features that make it a robust and powerful memory solution. It delivers high data bandwidth of up to 3.2 GB/sec. Furthermore, it supports burst operation with no extra clock cycles, and fast cycling between 16-bit deep page mode and 32-bit deep page mode. This memory device is ideal for applications that require high data bandwidth and fast cycling.The AS4C64M16D1A-6TCN can be used in a wide range of applications. It is ideal for graphics cards and gaming consoles, as well as servers, workstations, and embedded applications. The high performance and low power consumption of this device make it an ideal choice for applications that require fast read and write speeds with minimal power draw.The working principle of the AS4C64M16D1A-6TCN is based on the industry-standard 6T (SDRAM) technology. This includes the use of a three-port interface that is made up of address, data and control. It also includes a command sequence that must be followed in order for it to cycle through the available states of operation.The AS4C64M16D1A-6TCN operates in two states: a low-power idle state, and an active burst read/write state. When the device is in the idle state, its power consumption is considerably lower. It also has the ability to enter a self-refresh mode which further reduces power consumption.When the device is in the active burst read/write state, the memory device begins a data exchange sequence. This sequence consists of several steps which includes activating the CS# (Chip Select) signal, setting the device address, transferring data to and from the device, and finally de-asserting the CS# (Chip Select) signal.The AS4C64M16D1A-6TCN provides a robust and powerful memory solution for a variety of applications. It provides a high data bandwidth of up to 3.2 GB/sec, as well as burst operation with no extra clock cycles and fast cycling between its 16-bit deep page mode and 32-bit deep page mode. The low power consumption of this memory device makes it an ideal choice for applications that require fast read and write speeds with minimal power draw.

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