AS6C1008-55BIN Allicdata Electronics
Allicdata Part #:

1450-1164-ND

Manufacturer Part#:

AS6C1008-55BIN

Price: $ 1.46
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC SRAM 1M PARALLEL 36TFBGA
More Detail: SRAM - Asynchronous Memory IC 1Mb (128K x 8) Paral...
DataSheet: AS6C1008-55BIN datasheetAS6C1008-55BIN Datasheet/PDF
Quantity: 1000
480 +: $ 1.32961
960 +: $ 1.27587
1440 +: $ 1.23370
5280 +: $ 1.11628
Stock 1000Can Ship Immediately
$ 1.46
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (128K x 8)
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 36-TFBGA
Supplier Device Package: 36-TFBGA (6x8)
Description

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AS6C1008-55BIN is a low voltage, low power and high-speed CMOS 8K ×8bit Static RAM organized as 1,048,576 words by 8 bits, widely used in memory applications. It features common I/O configuration for both byte and word accesses and a single low voltage power supply of 3.0V ± 0.3V. The active power consumption at 3.0V is typically 5.3mA at 4MHz and 5.5mA at 10MHz. With fast access time of 55ns, AS6C1008-55BIN is a competitive choice for today\'s active schematics.

The AS6C1008-55BIN RAM contains an array of 1M × 8 bits arranged as 128K words by 8 bits. Power is supplied to the device by a single supply voltage of 3.0V ± 0.3V. All control and address signals are also referenced to this voltage. The device operates with a high speed access time of 55ns, with a CMOS low power consumption at 5.3mA at 4MHz and 5.5mA at 10MHz.

The AS6C1008-55BIN has a dual linear access scheme which enables simultaneous high speed access of individual bytes or words. In addition, the device features a common I/O configuration for both byte and word accesses, allowing simple interface to lower speed systems.

The AS6C1008-55BIN is compatible with most industry standard microprocessors, such as the 680x0 series, 80x86 series, and PowerPC. It is used in dynamic RAM applications such as gameboys, handheld computers, PDAs, and printers. It is also used in static RAM applications such as code memory and data memory in embedded systems and multimedia applications.

The working principle of the AS6C1008-55BIN is based on the concept of asynchronous logic devices. When an address is written the address decoder selects one out of the 256 Kbytes and the 8-bit block is read or written depending on the Input/Output (R/W) operation. The address keeps loading until the operation is completed. The operation is synchronized with the clock signal. The output data is given in less than 55ns after the clock transition.

The AS6C1008-55BIN is an ideal choice for applications that require low power, high-speed and low cost. Its common I/O configuration is designed for simplicity and flexibility, and its fast access time ensures reliable and high-performance operation. With its advanced CMOS process, the device offers a low power operation and a much longer data retention time. Therefore, it is a perfect choice for high performance, energy efficiency embedded and multimedia applications.

The specific data is subject to PDF, and the above content is for reference

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