AS6C8016-55ZINTR

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The AS6C8016-55ZINTR is a type of DRAM (dynamic random access memory) designed by Alliance Memory. It is a Double Data Rate Synchronous DRAM that operates on a 1.8 V power supply, with a clock frequency of 166, 250 and 333 MHz. This makes it an ideal choice for applications that require high performance and reliability.

This memory module is used mainly in embedded systems, where its low power consumption allows for efficient operation. It is also widely used in high-performance computing, network appliances and digital signal processors, where it provides the highest speed and the lowest power consumption available.

The AS6C8016-55ZINTR has a 72-bit bus, allowing for data transfer rates of up to 734 Mbps. It also supports up to 32-bit error correction and 1920-bit burst length. This makes it suitable for applications that require high levels of reliability and accuracy. Additionally, this DRAM supports a wide range of clock and temperature settings, allowing for better performance in a variety of conditions.

The working principle of the AS6C8016-55ZINTR is based on the two fundamental processes of the DRAM: refreshing of old data and writing of new data. On each clock cycle, the controller will read a bit of data and sample it. If the data is correct, it will be saved in the memory cell. Otherwise, the old data will be refreshed. The controller will then wait for the next bit to be read, and the cycle repeats. This process helps ensure that the data stored in the DRAM is correct and up-to-date.

The AS6C8016-55ZINTR is also equipped with several additional features, such as an auto-precharge mode and write protect. The auto-precharge mode reduces the amount of time needed to complete a write or read operation. The write protect feature prevents inadvertent data overwrites by locking cells for writing. In addition, the AS6C8016-55ZINTR has an on-chip thermal sensor that detects overheating conditions and reduces the power consumption accordingly.

In summary, the AS6C8016-55ZINTR is an advanced DRAM designed for high performance and reliability. Its 72-bit bus and error correction support allow for data transfer rates of up to 734 Mbps. Additionally, its auto-precharge mode, write protect features, and on-chip thermal sensors make it an ideal choice for embedded applications. It is also suitable for high-performance computing, network appliances, and digital signal processors.

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