AS6C4016-55BINTR

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The AS6C4016-55BINTR is a 16K x 8 Bit High Speed CMOS Static RAM widely used in auto-control, communication, audio-visual and other related fields. It is composed of 1,024K bits of internal improved Static RAM cells organized as 16K x 8 bits. This ultra low power SRAM provides high speed access time, fast data access and low power consumption. The AS6C4016-55BINTR is available in 0x400 CLOCK speed or 0x200 access time versions. The AS6C4016-55BINTR is also available with a built-in array of ECC (Error Correcting Codes) for data integrity.

The AS6C4016-55BINTR features a maximum access time of 12 ns (0x400 with 45 ns read access time) and is available in 3.3V and 5V options. The AS6C4016-55BINTR offers fast data access characteristics with read and write operations that are buffered for maximum speed and performance. The SRAM is designed for low power consumption and supports a variety of operating modes. The AS6C4016-55BINTR also supports byte level and word level operation.

The AS6C4016-55BINTR is designed to be a low cost, high performance memory solution for many applications. The AS6C4016-55BINTR supports a variety of operating modes to ensure the most efficient data retrieval and storage available. The AS6C4016-55BINTR offers a low power operation and a compatibility of higher speed access time. The AS6C4016-55BINTR has a built-in ECC array to protect against data corruption and provide error correction capabilities.

The AS6C4016-55BINTR provides a complete set of features for a wide range of application and industrial products. The AS6C4016-55BINTR is ideal for industrial, automotive and communication applications. The AS6C4016-55BINTR offers an excellent solution for memory intensive applications requiring both high speed access times and low power consumption. In addition, the AS6C4016-55BINTR provides an ideal solution for applications requiring an ECC array.

The AS6C4016-55BINTR’s working principle is based on the storage and retrieval of data in binary form. The memory consists of a matrix of cells, each of which stores a binary number. These binary numbers are represented as 0s and 1s and are read out of the memory when needed. Data is written to the memory in a similar manner. Writing and reading data to and from the memory is done by a series of logical operations enabled by a low voltage electrical signal.

The AS6C4016-55BINTR offers a wide range of applications. In industrial applications, the memory can be used to store and recall information in various devices. It can also be used in data logging applications as well as computer-controlled systems. Additionally, the AS6C4016-55BINTR can be used for industrial control systems that require rapid data retrieval and rapid process control.

The AS6C4016-55BINTR is also used in communication applications such as cache memory and buffer memory for voice, data and video. The uniformity and flexibility of the AS6C4016-55BINTR make it an ideal choice for telecommunications, wireless and data applications. The AS6C4016-55BINTR’s error-correcting coding (ECC) also makes it a great choice for mission critical applications.

The AS6C4016-55BINTR is an ideal choice for a wide variety of applications due to its low power consumption, high speed access time, and flexible design. The memory’s built-in error-correcting coding (ECC) and fast data access make it an attractive choice for mission critical applications. Additionally, the AS6C4016-55BINTR also provides high speed access for industrial and other high performance applications.

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