AS6C1016-55BINTR

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The AS6C1016-55BINTR is a low-power, low-voltage 10-bit CMOS static random-access memory (SRAM) that is optimized for use in portable products with power–saving functions. It uses a new cell structure and advanced CMOS technology to achieve a low static power consumption, while keeping operating and cycling times fast. Data is stored in an array of 10-bit cells, each having eight transistors, with a bit line per row and a source line shared by the two columns. The read/write control is achieved by a row-address decoder for selecting the row and a column selector for selecting the columns. The AS6C1016-55BINTR has a read cycle time rated at 55 ns and a write cycle time rated at 80 ns. Data is continuously stored in the memory, regardless of whether VCC is on or off. The device offers full static operation, eliminating the need for external clocks or timing strobes. It supports multiple methods for entry/exit from the low-power standby mode, including device activation by external address strobe and a fast recovery feature.

The AS6C1016-55BINTR has a data retention voltage of 1.2V, enabling power–saving Standby modes such as Sleep, Stop and Low–Power Suspend. The device also contains a built-in write protection circuit, allowing useful data to remain in the SRAM while all other circuitry is in a low–power state. Moreover, it is able to retain data for more than ten years, without the need for periodic refresh. This means it is ideal for use in applications which require considerable amounts of data to be stored, while using minimal power, such as notebook and handheld computers. Because of its low–power performance, it can also be used in applications where battery life is a priority, such as mobile radios and wireless headsets. The AS6C1016-55BINTR also has an enhanced pulse width for write operation accuracy, making it more suitable for low–voltage, high data-transfer rate applications.

The AS6C1016-55BINTR is also suitable for applications where a high degree of security is required, since it is able to protect important data by locking the contents in a write–protected configuration. This can be done by setting a single write–protect pin or by using a combination of pins to set the device in a desired write–protected state. Additionally, the device operates in both commercial and industrial temperature ranges, making it suitable for use in a wide variety of applications. Furthermore, with its industrial temperature grade variant (AS6C516-55BINTR) designed for industrial environments, the device is perfect for use for an application requiring robust operation in elevated ambient temperatures.

Overall, the AS6C1016-55BINTR is an ideal choice for portable applications where power is a priority. It offers a range of features and functionalities, such as a low static power consumption, data retention voltage of 1.2V, write protection circuit, enhanced write accuracy and multiple methods of entry/exit from low-power standby mode. It is a robust solution which can be used in both commercial and industrial temperature ranges, thus making it well-suited for a variety of applications. Most importantly, it provides significant power savings compared to other SRAMs, making it ideal for those applications which require sustained operation without draining the battery.

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