AS6C8008-55BIN Allicdata Electronics
Allicdata Part #:

1450-1187-ND

Manufacturer Part#:

AS6C8008-55BIN

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC SRAM 8M PARALLEL 48TFBGA
More Detail: SRAM - Asynchronous Memory IC 8Mb (1M x 8) Paralle...
DataSheet: AS6C8008-55BIN datasheetAS6C8008-55BIN Datasheet/PDF
Quantity: 851
Stock 851Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 8Mb (1M x 8)
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-LFBGA
Supplier Device Package: 48-TFBGA (6x8)
Description

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The AS6C8008-55BIN is classed as a type of memory system present on the market. It is an SDRAM chip designed by Alliance Semiconductor to replace the former generation of conventional DRAM chips, allowing significant performance increases as well as cost savings while maintaining industry standard memory bus compatibility.

The AS6C8008-55BIN is a preferred SDRAM memory system solution due to its low power consumption, high capacity, and relatively inexpensive cost. It is widely used in the applications such as parallel and serial memory expansion, embedded non-volatile and graphic code applications, solid state drives, digital audio, digital video, and multimedia applications.

The AS6C8008-55BIN’s working principle is mainly based on the SDRAM structure. SDRAM stands for Synchronous Dynamic Random Access Memory, which is a type of RAM that works in synchronization with the system clock. This type of RAM is composed of two components: Static RAM (SRAM) and Dynamic RAM (DRAM). The SRAM component integrated into the memory chip holds the data during the cycle, while the DRAM component stores the data. The SRAM and DRAM data is stored in the same internal RAM unit, allowing the system to read data more efficiently.

The AS6C8008-55BIN employs what is called a Pipelined Burst technique in order to increase memory throughput. This technique uses a single row of data stored in a specific array of address locations on the chip, and allows data to be read out of the memory in the correct sequential order. In conventional DRAM systems, the entire array of data must be read in one cycle, while the AS6C8008-55BIN can read the data in 4 distinct cycles. This significantly increases data retrieval speed.

Another important property of the AS6C8008-55BIN is that it is configured to function with single-cycle access. This type of access allows for an efficient and economical performance in memory applications. Thus, its low power consumption makes it suitable for vast types of consumer electronics and digital devices.

The AS6C8008-55BIN also has a number of features which make it popular among electronic designers and manufacturers. These features include fast access time, low power consumption, high memory speed and density, and relatively low cost. It is a safe and reliable memory device that provides consistent performance over long periods of time. In addition, its error correcting capability ensures data protection against random errors.

In conclusion, the AS6C8008-55BIN is a advanced memory system that is suitable for a wide range of applications. It is an affordable and reliable solution for high capacity memory systems, as well as a great choice for any consumer electronics product due to its power efficiency, durability and error correcting capabilities. The AS6C8008-55BIN is a great solution for any application which requires a reliable and powerful memory system.

The specific data is subject to PDF, and the above content is for reference

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