AS6C3216A-55BINTR Allicdata Electronics
Allicdata Part #:

AS6C3216A-55BINTR-ND

Manufacturer Part#:

AS6C3216A-55BINTR

Price: $ 10.65
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC SRAM 32M PARALLEL 48TFBGA
More Detail: SRAM Memory IC 32Mb (2M x 16) Parallel 55ns 48-TF...
DataSheet: AS6C3216A-55BINTR datasheetAS6C3216A-55BINTR Datasheet/PDF
Quantity: 1000
2000 +: $ 9.68485
Stock 1000Can Ship Immediately
$ 10.65
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM
Memory Size: 32Mb (2M x 16)
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-LFBGA
Supplier Device Package: 48-TFBGA (8x10)
Description

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AS6C3216A-55BINTR belongs to the memory types of semiconductor products. This type of semiconductor memory chip has large capacity and low power consumption, and its integrated ESO technology has the advantages of high speed and low energy consumption. This article will provide information about the application field and working principle of the AS6C3216A-55BINTR.

The AS6C3216A-55BINTR is mainly designed for use in small electronic devices, such as wrist watches, calculators, microwave ovens, and other electronic devices. It can also be used in industrial control systems, such as automated manufacturing systems, telecommunications systems, and global positioning systems. This type of memory chip is also suitable for use in embedded applications.

The AS6C3216A-55BINTR is composed of a single-crystal silicon substrate, an integrated ESO circuit, and numerous sub-address circuits. The single-crystal silicon substrate contains the logic and memory functions of the memory chip. The integrated ESO circuit provides the raw data information to the single-crystal silicon substrate. The sub-address circuits are responsible for controlling the individual blocks or segments of the chip’s memory.

The working principle of the AS6C3216A-55BINTR is based on the principle of electric capacitance. In this memory chip, a voltage is applied to the surface of the single-crystal silicon layer, which causes a series of electrical charges to form in the memory cells. The charges on the memory cells represent data. When the voltage is removed, the electrical charges are stored in the memory cells.

The AS6C3216A-55BINTR uses a special type of memory operation called “overclocking”. This type of operation is used to increase the access speed of the memory chip. By increasing the clock frequency, the access time of the memory chip can be decreased significantly. This type of memory operation increases the efficiency and speed of the memory chip.

The AS6C3216A-55BINTR is a reliable and low-power-consumption memory chip. Its integrated ESO technology enables it to have high speed and low power consumption. This type of memory chip is mainly used in small electronic devices and embedded applications. Its working principle is based on the principle of electric capacitance, and it uses the overclocking memory operation for faster data access.

The specific data is subject to PDF, and the above content is for reference

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