AS6C1616-55TINL Allicdata Electronics
Allicdata Part #:

AS6C1616-55TINL-ND

Manufacturer Part#:

AS6C1616-55TINL

Price: $ 5.75
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC SRAM 16M PARALLEL 48TSOP I
More Detail: SRAM Memory IC 16Mb (1M x 16) Parallel 55ns 48-TS...
DataSheet: AS6C1616-55TINL datasheetAS6C1616-55TINL Datasheet/PDF
Quantity: 1000
135 +: $ 5.22088
270 +: $ 4.96258
540 +: $ 4.91164
1080 +: $ 4.74792
Stock 1000Can Ship Immediately
$ 5.75
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM
Memory Size: 16Mb (1M x 16)
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I
Description

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The memory segment of the semiconductor industry is one of the most important elements of modern electronics. The AS6C1616-55TINL is a memory chip for low power applications, the memory used in this chip is the 16Mbit SDRAM, which comes from Alliance Memory. This chip is built on a TSMC 55nm process and is compatible with both the +1.2V VDD and +3.3V VDDT power supply ranges, allowing it to be used in a variety of applications.

The AS6C1616-55TINL is a combination of an SRAM and SDRAM, and is designed to provide a larger storage capacity with lower power dissipation. It has a high speed of operation with a data transfer speed of 266MHz, making it suitable for applications such as servers, routers and printers. It also has low power consumption, allowing it to be used in embedded systems as well.

The AS6C1616-55TINL is based on an asynchronous DRAM architecture, which means that the chip does not have to wait for data from the processor before it reads or writes data. This allows the chip to operate at much lower voltage levels, reducing power consumption. The chip also features an error correction coding (ECC) and parity checking system, ensuring that the memory content is reliable, even after long periods of use.

The AS6C1616-55TINL supports a wide range of operating voltage levels, ranging from 1.2V to 3.3V. This allows it to be used in various applications, such as telecommunications, networking, embedded systems, graphics display controllers, military, medical and test and measurement equipment. This chip is also used in automotive applications, due to its low power consumption and large storage capacity.

In addition, the AS6C1616-55TINL supports both synchronous and asynchronous DRAM operations. This provides flexibility in designing the memory system, allowing it to be used in systems which require a larger storage capacity with lower power consumption. The chip also supports a fast page mode, which allows for fast data access. Furthermore, the chip also supports on-chip error detection and correction, enabling reliable memory operation.

The AS6C1616-55TINL is a low-power, high-performance memory chip for low power applications, offering a wide range of operating voltage levels and large storage capacity. The asynchronous DRAM architecture allows for fast data access, while the error correction and parity checking system ensures reliable memory operation. The chip is also compatible with many automotive applications, due to its low power consumption and large storage capacity.

The specific data is subject to PDF, and the above content is for reference

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