AS6C8008A-45ZINTR Allicdata Electronics
Allicdata Part #:

AS6C8008A-45ZINTR-ND

Manufacturer Part#:

AS6C8008A-45ZINTR

Price: $ 3.05
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC SRAM 8M PARALLEL 44TSOP II
More Detail: SRAM - Asynchronous Memory IC 8Mb (1M x 8) Paralle...
DataSheet: AS6C8008A-45ZINTR datasheetAS6C8008A-45ZINTR Datasheet/PDF
Quantity: 1000
1000 +: $ 2.76837
Stock 1000Can Ship Immediately
$ 3.05
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 8Mb (1M x 8)
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II
Description

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The AS6C8008A-45ZINTR is an 8Kx8 bit dynamic random access memory, which is extremely useful for applications requiring fast, reliable and stable storage. It is a low-power, high-performance memory IC that is often found in consumer electronics, industrial automation, medical and automotive markets, as well as military/aerospace applications. In this article, we will discuss the application field and working principle of the AS6C8008A-45ZINTR memory.

The AS6C8008A-45ZINTR memory is a perfect choice for applications that require a high degree of reliability. It has a small footprint and provides fast data retrieval, making it an ideal choice for industrial, automotive, medical and military/aerospace applications. It has an extended temperature range of -40°C to +125°C and is available in both surface mount and thru-hole packages.

The AS6C8008A-45ZINTR memory is built on a low-power CMOS process and utilizes a two-transistor cell design to achieve fast data rates and low-power operation. It features an 8K x 8 bit organization and has a read cycle of 35ns and a write cycle of 55ns. The device also features a low-power standby mode, allowing it to consume very little power when not in use.

The AS6C8008A-45ZINTR memory is capable of supporting both synchronous and asynchronous operations. In synchronous operation, the device is clocked at a predetermined rate to ensure that data can be transferred in a timely manner. In asynchronous operation, the device is not clocked and data is only transferred once the device is triggered. Additionally, the device is also capable of providing a higher level of hardware protection and data integrity by utilizing error correcting code (ECC) circuitry.

The AS6C8008A-45ZINTR memory utilizes a three-line cell that is made up of two transistors and an programming bit. The programming bit is responsible for storing the data and is operated by control logic. The two transistors are then used to switch the data between the memory cell and external circuitry. The control logic controls the operation of the transistors and the programming bit, allowing data to be stored and retrieved in a timely manner.

In order to read data from the memory, the control logic sends a signal to the programming bit, which results in the two transistors switching states. The switched state of the transistors is then used to read data from the memory cell. When writing data to the memory, the control logic sends a signal to the programming bit, causing the two transistors to switch states. This allows the data to be written to the memory cell.

Overall, the AS6C8008A-45ZINTR memory is an ideal choice for applications that require fast, reliable and low-power memory storage. Its small footprint and fast data retrieval make it an excellent choice for industrial, automotive, medical and military/aerospace applications. In addition, its extended temperature range, ECC circuitry and low-power operation make it an ideal choice for a wide variety of applications.

The specific data is subject to PDF, and the above content is for reference

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