Series:	--
Packaging:	Tray
Part Status:	Active
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Asynchronous
Memory Size:	256Kb (32K x 8)
Write Cycle Time - Word, Page:	55ns
Access Time:	55ns
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 5.5 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	28-TSSOP (0.465", 11.80mm Width)
Supplier Device Package:	28-sTSOP

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AS6C62256-55STCN Application Field and Working Principle

Introduction

AS6C62256-55STCN is a synchronous dual-port memory that provides an extremely flexible solution for embedded systems. It has been developed specifically to meet the needs of applications requiring multiple ports with different data rates such as communications and networking equipment. With a low latency, high-performance architecture, this memory device offers an excellent solution for high-performance data storage.

Application Field

AS6C62256-55STCN is designed for use in a wide variety of demanding applications, especially in communications and networking equipment. It can be used for storing packet data for packet-switched networks and for buffering in general data communications applications. Additionally, the device can be used for storing register information in pipelined embedded processors as well as in image and audio processing systems. In these applications, the memory device can be used as a temporary storage buffer or to maintain critical state information.

Architecture

The AS6C62256-55STCN is a high-performance synchronous dual-port memory device. It consists of a 128-bit data bus, two independent ports with different data rates, two clock domains, two separate address buses, and two write enable signals. The two ports each utilize separate address, data and write enable signals to minimize the effects of contention during accesses. The device is organized as sixteen 1024-bit sectors and offers a total capacity of 16 kilobytes.

Operation

The device is designed to operate at different data rates and can be accessed concurrently from two independent ports. The device is capable of supporting simultaneous read and write operations on the two ports. When data is written to the device, the device can store it until the next write operation occurs, or until the data is read from the device.When data is read from the device, the data is latched into a first-in first out memory that is used to buffer the data between the two ports. This buffer allows the data to be accessed at different speeds without causing contention and without the need for wait states.

Conclusion

The AS6C62256-55STCN is a high-performance, low latency synchronous dual-port memory device that is ideal for a variety of applications. It can be used to store packet data for packet-switched networks, as well as for buffering in general data communications applications. It can also be used for storing register information in pipelined embedded processors as well as in image and audio processing systems. By incorporating a first-in first out memory, the device can support simultaneous read and write operations from two different ports. Its flexible design and high-performance architecture make it an excellent choice for embedded systems applications.

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