AS6C4016A-45BINTR

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The AS6C4016A-45BINTR is a high speed, low power static random access memory (SRAM) device. It is a part of the AS6C40family of memories. This device is a 16-bit Static RAM device with an internal 2-Kbit memory capacity. It has a high speed of 30ns at 5V and consumes very low power of 6.5mW per bit. It is intended for use in a wide variety of portable applications, requiring low power, high performance SRAMs.

The AS6C4016A-45BINTR is designed for high speed, low power operation. It has an advanced clock control feature which enables it to operate at speeds up to 30ns. It has an internal address bus which is independent of the address pins. This allows it to access data stored in more than one address at a high speed. The device also features an integrated power control to ensure low current consumption.

The AS6C4016A-45BINTR is a cost-effective solution for applications where high speed, low power operation is key. It can be used in a variety of applications such as embedded system, cell phone and computer application, networking and telecommunications applications, and in portable devices. It is also suitable for applications where a high speed, low power, and low cost SRAM device is required.

The AS6C4016A-45BINTR operates in both asynchronous and synchronous mode, allowing it to be used in a variety of system configurations. In synchronous mode, the device can be used to store and access data at burst rates up to 400M bits/sec. When operating in asynchronous mode, the device can write and read data at a maximum rate of 8M bits/sec.

The AS6C4016A-45BINTR features a wide input voltage range from 2.0V to 6.0V. It requires no external components, making it a cost and space effective solution for applications. It is available in both TSOP and BGA packages and can be used in a variety of temperatures.

The Working principle of the AS6C4016A-45BINTR is based on static random access memory (SRAM) which is composed of multiple cells of storage which contain the data. The data is stored in the storage cells using MOS Transistors which act like switches. These transistors are switched on and off to represent the bits of the data being stored. The memory chip is made up of rows and columns. When the control circuits select a row of cells, the data can be read or written to the storage cells.

The AS6C4016A-45BINTR is an ideal memory choice for applications requiring a low power, high speed solution. Due to its low power consumption and wide voltage range, it is well suited for use in a variety of portable applications. The device is also designed for high speed operation, making it suitable for use in a variety of system configurations.

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