AS6C1016-55ZIN

Series:	--
Packaging:	Tray
Part Status:	Active
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Asynchronous
Memory Size:	1Mb (64K x 16)
Write Cycle Time - Word, Page:	55ns
Access Time:	55ns
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 5.5 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	44-TSOP (0.400", 10.16mm Width)
Supplier Device Package:	44-TSOP II

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What is AS6C1016-55ZIN?

AS6C1016-55ZIN is a type of memory device. It includes 4,096 bits of static random-access memory (SRAM) organized as 512 words of 8 bits each. It is an integrated circuit with a 6-pin package and is available in various speed and power ratings.

Application Field of AS6C1016-55ZIN

AS6C1016-55ZIN is widely used in a variety of applications. These include:

• Industrial controllers – Used for control and automation of various industrial processes.
• Communication systems – Used for data storage and access in communication devices such as routers and switches.
• Embedded systems – Used to store data and program information in embedded devices such as microcontrollers and microprocessors.
• Consumer electronic devices – Used for data storage and access in digital cameras, camcorders, and other consumer electronic gadgets.

Working Principle of AS6C1016-55ZIN

The working principle of AS6C1016-55ZIN is similar to other static random-access memory devices. It is comprised of memory cells, each of which is capable of storing one bit of information (a 1 or 0). The memory cells are organized into 512 words of 8 bits each. It includes address and data buses which allow the user to read or write data to or from the memory. The way data is stored in the device is as follows. When a write operation is performed, the address and data are supplied to the device. The address signals are used to select a memory cell and the data is stored in that cell. When a read operation is performed, the address is supplied to the device and the data from the corresponding cell is read out.

Conclusion

The AS6C1016-55ZIN memory device is a type of static random-access memory (SRAM) integrated circuit. It is used for a wide range of applications and is capable of storing 512 words of 8 bits each. The way data is stored and read from the device is done using address and data buses.

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