AS6C4008-55ZIN

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Memory is an important part of computing systems, as it is necessary to store information that can be retrieved later. The AS6C4008-55ZIN is a high-performance static RAM (SRAM) designed to provide fast, reliable operation with significant power savings. It is a 18 Mbit device, organized as 18,432,000 bits arranged in 1,024,000 words by nine bits. The device features an operating voltage range of 1.8V and a maximum operating current of 0.6 mA. The AS6C4008-55ZIN is suitable for use in embedded systems and real-time applications such as audio, video, and graphics, as well as other low-power devices.

The AS6C4008-55ZIN is capable of an access time of 55ns, allowing it to operate at high speed in demanding applications. The SRAM is also capable of an extremely low standby current, allowing the device to be virtually unnoticeable in power-sensitive applications. The device includes an automatic power-down feature to further reduce power consumption when the device is not in active use.

The AS6C4008-55ZIN utilizes a multi-wired storage cell structure which allows for a higher storage density than traditional single-bit structures. This makes the device perfect for applications where high storage density is important, such as embedded systems that require large amounts of data. The device offers a typical read/write cycle time of 70ns, allowing it to process data quickly while providing significant power savings.

The AS6C4008-55ZIN also features an integrated ECC that reduces errors in data stored in the SRAM by detecting and correcting single-bit errors. This is particularly helpful in applications where high reliability is important, such as mission-critical systems and medical equipment. The ECC can also detect double-bit errors, preventing them from occurring in the first place.

The AS6C4008-55ZIN is available in a range of package options to suit the needs of a variety of applications. These packages range from small, TSSOPs and SOPs to larger, SOICs and BGA packages. The device is also available in a range of densities, from 8Mb to 18Mb, allowing it to be used in a variety of projects with different memory requirements.

In summary, the AS6C4008-55ZIN is an ideal SRAM for embedded systems requiring high performance and power efficiency. Its multi-wired storage cell structure allows for a higher storage density compared to single-bit structures, making it perfect for applications where maximum storage is required. With a typical access time of 55ns and a typical read/write cycle time of 70ns, the AS6C4008-55ZIN is perfect for demanding applications requiring speed and low power consumption. Finally, the integrated ECC allows for a higher degree of reliability by detecting and correcting single-bit errors, as well as detecting double-bit errors.

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