AS6C2016-55ZINTR Allicdata Electronics
Allicdata Part #:

AS6C2016-55ZINTR-ND

Manufacturer Part#:

AS6C2016-55ZINTR

Price: $ 1.52
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC SRAM 2M PARALLEL 44TSOP II
More Detail: SRAM - Asynchronous Memory IC 2Mb (128K x 16) Para...
DataSheet: AS6C2016-55ZINTR datasheetAS6C2016-55ZINTR Datasheet/PDF
Quantity: 1000
1000 +: $ 1.38174
Stock 1000Can Ship Immediately
$ 1.52
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 2Mb (128K x 16)
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II
Description

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Introduction

The AS6C2016-55ZINTR is a memory device designed and manufactured by Advanced Silicon Solutions (AS2I) – a rapidly growing hardware manufacturer specializing in the production of ASICs, FPGAs, and high-end memory products. As a part of the AS2I family, the AS6C2016-55ZINTR memory device is a low-latency, high-performance memory solution engineered to deliver outstanding performance while providing maximum reliability. The device is designed to meet the needs of any bandwidth-intensive application, and its features are optimized for use in both the enterprise and consumer markets.

Application Field

The AS6C2016-55ZINTR memory device is suitable for use in a wide range of applications, including computer systems, industrial and embedded applications, telecoms, automotive, medical, aerospace and defense. It can be used as a storage device for data and control systems, as well as for high-speed data transmission and signal processing. Its features are especially attractive for applications such as medical imaging, remote sensing, robotic control, streaming video, home and industrial automation and military communications.

Working Principle

The AS6C2016-55ZINTR memory device utilizes the state-of-the-art DDR5 technology, enabling it to achieve high-bandwidth performance with low latency and power consumption. The device is designed with a 16-bit data path and can operate at speeds of up to 4800MHz, increasing the efficiency of data transfers and signal processing. The accuracy of its operations is ensured by its advanced error-correction capabilities (ECC), which can detect any errors during data transfers and automatically correct them.The device also features an integrated power management system (PPMS), which is used to regulate power consumption levels and maintain optimal performance, regardless of the intensity of the workload. In addition, the device supports an array of advanced security features, such as secure boot, secure erase and Secure JTAG, for added protection and reliability.

Conclusion

The AS6C2016-55ZINTR is a powerful and reliable memory solution for any bandwidth-intensive application. Its features are engineered to deliver high-performance in a variety of applications, from computer systems, industrial applications and telecoms to robotics, streaming video and military communications. The device is designed to maintain optimal performance with minimal power consumption, while its advanced error-correction and security features ensure that the data is reliably and securely transmitted.

The specific data is subject to PDF, and the above content is for reference

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