AS6C2008-55SINTR Allicdata Electronics
Allicdata Part #:

AS6C2008-55SINTR-ND

Manufacturer Part#:

AS6C2008-55SINTR

Price: $ 1.52
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC SRAM 2M PARALLEL 32SOP
More Detail: SRAM - Asynchronous Memory IC 2Mb (256K x 8) Paral...
DataSheet: AS6C2008-55SINTR datasheetAS6C2008-55SINTR Datasheet/PDF
Quantity: 1000
1000 +: $ 1.38174
Stock 1000Can Ship Immediately
$ 1.52
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 2Mb (256K x 8)
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Supplier Device Package: 32-SOP
Description

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AS6C2008-55SINTR Application Field and Working Principle

The AS6C2008-55SINTR is a part of a series of low-power, low-voltage CMOS Static Random Access Memory (SRAM). This series is constructed to provide n-bit wide memory partitioning and a wide voltage range of 25 to 65V. This particular part is organized as 16K x 8 bits, featuring a low power consumption of 1mW at 10-MHz cycle frequencies, a low-profile and a low standby power consumption.

Application fields of this product include automatic load-up and data hold functions in handheld and portable devices such as mobile phones, PDAs, digital audio players, and LCD TVs. It is also used in automotive applications ranging from sensing, control, and body electronics. Furthermore, it can be used as a cache or buffer in low-power embedded applications such as network routers and switches.

This SRAM utilizes several world-class design technologies such as an advanced CMOS design and an ultra-low power CMOS process. Its chip combines logic, memory and support circuits on the same monolithic device. Its wide operating voltage range and high speed enable it to operate on a wide range of power sources with different voltages.

Working principle of this type of memory involves the reading and writing of data with a series of transistors. A transistor typically works as a switch that opens or closes a pathway between two nodes. In the case of SRAM, transistors are used to control the bits of a write. Data is stored in a specific pattern of open and/or closed pathways (1s and 0s). During writing, a specific combination of open and/or closed pathways is created and locked, representing the data that is being written. During reading, that specific combination is checked for the data. This type of memory will not lose its contents until power is removed. As the parts can maintain their contents for an extended period of time, this type of memory is ideal for data storage.

The AS6C2008-55SINTR is a low-power, low-voltage CMOS Static Random Access Memory (SRAM) offering many high performance features and technologies. Its low power consumption and wide voltage range make it suitable for many applications such as mobile phones, PDAs, digital audio players, automotive applications, and embedded applications such as network routers and switches. It utilizes transistors to control the bits of a write and locks specific combinations of open and/or closed pathways representing data that is being written. It is a reliable source of memory ideal for stores data.

The specific data is subject to PDF, and the above content is for reference

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