AS6C2008A-55BINTR Allicdata Electronics
Allicdata Part #:

AS6C2008A-55BINTR-ND

Manufacturer Part#:

AS6C2008A-55BINTR

Price: $ 1.50
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC SRAM 2M PARALLEL 36TFBGA
More Detail: SRAM - Asynchronous Memory IC 2Mb (256K x 8) Paral...
DataSheet: AS6C2008A-55BINTR datasheetAS6C2008A-55BINTR Datasheet/PDF
Quantity: 1000
2000 +: $ 1.35859
Stock 1000Can Ship Immediately
$ 1.5
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 2Mb (256K x 8)
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 36-TFBGA
Supplier Device Package: 36-TFBGA (6x8)
Description

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Memory is one of the most important components in any computing system. It is used to store data, programs, input and output information etc. In order to meet the ever-increasing demand for higher performance, there are different types of memory available on the market. Among them, AS6C2008A-55BINTR (ASIC-based Flash Memory) is specially designed for high-performance embedded applications. This article will discuss the application field and working principle of AS6C2008A-55BINTR.

AS6C2008A-55BINTR is a single-chip low-power-consumption embedded Flash memory device manufactured by Toshiba. It is designed to provide efficient and fast operation in demanding applications, especially in automotive applications. In these applications, AS6C2008A-55BINTR can be used for storing control and parameter configuration data, application code and program data. Furthermore, it provides superior reliability and has extended temperature range up to 125°C.

The working principle of AS6C2008A-55BINTR relies on Flash memory technology, which is a type of nonvolatile memory. In Flash memory, the data is stored in transistors that work as a switch, which either blocks or passes the current based on the input voltage. To store or erase data, high voltage is applied to the transistor gate to change the transistor from an open state to a closed state or vice-versa. Once the desired data is stored, the chip requires no additional power to hold the data, making Flash memory suitable for certain applications in which data needs to be retained even when power is turned off.

AS6C2008A-55BINTR is an optimized solution for automotive system designs due to its low active power consumption, and its data retention activity does not exceed 25 µA. This memory device holds the data even when power is turned off, allowing it to be used in applications that require data to be loaded onto the chip when the system is powered up. In addition, its advanced ECC (Error Checking & Correction) technology further enhances the robustness of the memory, making it suitable for mass production in high-speed applications.

In terms of its applications, AS6C2008A-55BINTR is mainly used in automotive system designs such as powertrain, body control, chassis, advanced driver assistance systems (ADAS). Not only can it store code and configuration data for control accuracy and reliability, it can also work with advanced features like CAN-FD (Controller Area Network-Flexible Data Rate) and advanced noise cancellation. Its high operating speed also makes it a suitable choice for applications with real-time demands.

To sum up, AS6C2008A-55BINTR is a high-performance and low-power Flash memory device that is specifically designed for use in automotive applications. It is particularly suited for applications that require high speed and robust error correction features. At the same time, its low-power consumption and extended temperature range make it an ideal choice for automotive system designs.

The specific data is subject to PDF, and the above content is for reference

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