AS6C3216-55BINTR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Asynchronous
Memory Size:	32Mb (2M x 16)
Write Cycle Time - Word, Page:	55ns
Access Time:	55ns
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	48-LFBGA
Supplier Device Package:	48-TFBGA (8x10)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

The AS6C3216-55BINTR is a memory device developed and produced by Alliance Semiconductor Corporation. It is a synchronous static RAM (SRAM) that includes an array of 16,384 bits organized in 256K words by 16 bits. This device is built in a 0.5-micron CMOS process and is available in a 52-pin PLCC chip.

Application Field

The AS6C3216-55BINTR can be used in many different applications which include the following: High-performance microcomputer, Networking and Telecommunications, Automotive and Consumer Technology. It is suitable for applications where fast access times, low power consumption and a high degree of reliability are required. This memory device can also be used in video systems, medical equipment, instrumentation and any other areas that need a fast and reliable memory device.

Working Principle

The AS6C3216-55BINTR is an asynchronous static RAM which means that the device does not require a clock signal for operation. The integrated circuit is arranged in an array of 256K words by 16 bits of organized memory. Each memory word is composed of four bytes, each of which can be addressed separately. Data can be written and read in random access and sequential access mode, meaning that data can be read or written without having to access the memory in a specific order.The memory is organized into four banks of 64K words. Each bank is accessible separately, allowing for very fast access times to the desired data. The device features data and address multiplexing which enables higher speed access times. The device also features burst and cycle control which allows for a faster flow of data during sequential access operations.

Conclusion

The AS6C3216-55BINTR memory device is an ideal choice for applications where convenience and speed are a priority. It is designed to provide high performance and reliability in a variety of environments and applications. With its wide range of features, including fast access times, low power consumption and a high degree of reliability, it is an ideal choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description