AS6C4008-55TIN Allicdata Electronics
Allicdata Part #:

1450-1030-ND

Manufacturer Part#:

AS6C4008-55TIN

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC SRAM 4M PARALLEL 32TSOP I
More Detail: SRAM - Asynchronous Memory IC 4Mb (512K x 8) Paral...
DataSheet: AS6C4008-55TIN datasheetAS6C4008-55TIN Datasheet/PDF
Quantity: 644
Stock 644Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (512K x 8)
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 32-TSOP I
Description

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AS6C4008-55TIN Memory Application Field and Working Principle

The AS6C4008-55TIN is an 8 Kb non-volatile Static RAM (SRAM) memory chip developed by Alliance Memory. This memory device provides reliable storage of data and instructions for a wide range of applications in industrial and consumer electronics. The chip features a low stand-by power-dissipation, a fast access time of 35 ns, and various features like read/write protect, byte write protect, byte enable, status bit protection, and a data protection circuit.

The AS6C4008-55TIN can be used in industrial and consumer electronics as an economical and low-power solution in applications such as data logging, program storage and code locking. It is suitable for applications in microcontrollers and in electronic devices such as digital video recorder, smart meters, and various special microcontroller designs.

Working Principle

The working principle of the AS6C4008-55TIN follows a simple architecture. It is a chip-selectable device with separate mode control and data-strobe inputs, and an asynchronous write-enable input. There are 16 address inputs, 8 data inputs and 8 data output for the device. When the chip is selected and /WE is active, the write operation is activated. The data is written to the address specified by the address pins. The data is written in column-mode and a write operation can be performed in a single operation.

The read operation is initiated when the device is selected and /WE is not active. The address inputs specify the location of the data to be read and the data is outputted on the data output pins. The cycle time for the device is 35 ns which is very fast. The device has an auto-power-down feature which activates when the device is not selected and consumes less power. It also features a read/write protect function which disables the write operation and allows the device to maintain its content even when the power is disconnected.

The AS6C4008-55TIN also provides a byte enable circuit which prevents any unwanted bits from being written. Furthermore, this memory device also features a status-bit protection circuit which prevents accidental write operations to the status bit. It also has error detection and correction logic that ensures proper data storage.

Conclusion

In conclusion, the AS6C4008-55TIN is an 8 Kb non-volatile SRAM memorychip with fastaccess time and various features like read/write protection and byte enable which suits a wide range of applications in industrial and consumer electronics. It has a simple architecture and its cycle time is 35 ns providing reliable storage of data and instructions. It has a low stand-by power-dissipation and auto-power-down feature, together with a status bit protection circuit and error detection and correction logic, making it a suitable choice for industrial and consumer electronics applications.

The specific data is subject to PDF, and the above content is for reference

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