AS6C8008-55ZIN Allicdata Electronics
Allicdata Part #:

1450-1039-ND

Manufacturer Part#:

AS6C8008-55ZIN

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC SRAM 8M PARALLEL 44TSOP II
More Detail: SRAM - Asynchronous Memory IC 8Mb (1M x 8) Paralle...
DataSheet: AS6C8008-55ZIN datasheetAS6C8008-55ZIN Datasheet/PDF
Quantity: 4509
Stock 4509Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 8Mb (1M x 8)
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II
Description

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Memory is one of the most important components of any computer. It stores data, programs, and other information that must be accessed quickly and reliably. The AS6C8008-55ZIN is a memory device that has many useful applications in the computing world. This article will discuss its application fields and working principle.

Application Field

The AS6C8008-55ZIN is a 8K x 8 non-volatile Static Random Access Memory (SRAM). It offers high speed, low power consumption, and a wide operational temperature range. It is designed for use in many different types of applications, including embedded systems, industrial controllers, medical equipment, and data acquisition. It is also used for cache memory applications. Its low power consumption makes it an ideal choice for embedded designs.

The AS6C8008-55ZIN is a pin-compatible replacement for multiple 4K x 8 SRAMs, so it can be used as an upgrade solution in existing designs. It is also suitable for designers who are looking for a single component to achieve higher density applications. The device utilizes 8 pins to transfer data, which helps reduce circuit complexity and part count.

Working Principle

The AS6C8008-55ZIN uses a unique arrangement of logic circuits to achieve its fast operation and low power consumption. The device consists of two 8K x 8 SRAMs, each with its own 8-bit interface. This allows the device to access two memory locations simultaneously. When a read or write instruction is given, the interfaces access the two memory locations, and the output is provided. The device also has an address latch so that the addresses are stored even when the power is off.

The device also features a special circuit that can detect single bit errors and correct them via an error-correction algorithm. This ensures that the data stored in the memory is valid and reliable. It can also monitor for suspicious patterns of access and take corrective action if necessary.

In addition to its logic circuits, the AS6C8008-55ZIN also has some physical components. The device is packaged in an 8-pin DIP package, which makes it easy to install and compatible with most electronic protoboard designs. The device also uses low power CMOS technology, which helps to reduce power consumption.

The AS6C8008-55ZIN is an ideal memory solution for many applications. Its low power consumption, fast operation, and reliable error-correction make it a great choice for embedded systems, industrial controllers, medical equipment, and data acquisition. It is also easy to install and pin-compatible with multiple 4K x 8 SRAMs, making it an ideal upgrade solution.

The specific data is subject to PDF, and the above content is for reference

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