AS6C1616A-55BINTR

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The AS6C1616A-55BINTR is a type of non-volatile random-access memory (NVRAM), specifically a static random-access memory (SRAM). It is used to provide long-term storage of data in embedded systems typically used in applications where power loss or device reset is anticipated. As such, it is manufactured in a range of different package types and densities.

The AS6C1616A-55BINTR is manufactured by Alliance Memory Inc., and is an asynchronous SRAM. This means that it is designed to operate with asynchronous clock speeds, meaning data can be read and written to it asynchronously as opposed to synchronous memories which are forced to transfer data only at certain clock speeds.

The AS6C1616A-55BINTR is composed of six memory cells per bit, which are arranged in a 16Kb (16,384-bits) configuration. This static RAM is capable of operating from a single 2.7–3.6V supply voltage. It has an access time of 55ns and a standby current of 8µA. It is a parallel (8- or 16-bit) device, meaning that the data is transferred in parallel as opposed to being transferred in series as with serial memory. It also features a Chip Select (CS/CE#) pin which is used to control whether data can be read from or written to the device.

The AS6C1616A-55BINTR is used in a wide range of embedded applications. It is commonly used in industrial, automotive, medical, and security systems due to its ability to maintain data when power is disrupted. It can also be used in consumer electronics such as digital cameras, digital video cameras, handheld gaming devices, and smart watches. In addition, it can be used in critical systems such as telecommunications systems and computer systems.

The working principle of the AS6C1616A-55BINTR is as follows: when power is applied, the device is activated and data can be either read from or written to it. Data is read from or written to the device by applying a logic low to the CS/CE# pin. When the CS/CE# pin is pulled to a logic low, data can be written to the device by placing the data to be written on the data bus and by applying the write enable (WE#) signal in the opposite phase. To read from the device, data is placed on the data bus and the read enable (OE#) signal is applied in the opposite phase.

Overall, the AS6C1616A-55BINTR is an asynchronous static RAM that is used in a wide range of embedded systems. It is composed of six memory cells per bit and is capable of maintaining data when power is lost or device reset is anticipated. Data can be read from or written to the device by applying a logic low to the CS/CE# pin and the appropriate read or write enable signal. The AS6C1616A-55BINTR is a versatile and reliable memory device capable of storing data in a variety of applications.

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