AS6C6416-55BINTR Allicdata Electronics
Allicdata Part #:

AS6C6416-55BINTR-ND

Manufacturer Part#:

AS6C6416-55BINTR

Price: $ 13.71
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC SRAM 64M PARALLEL 48TFBGA
More Detail: SRAM Memory IC 64Mb (4M x 16) Parallel 55ns 48-TF...
DataSheet: AS6C6416-55BINTR datasheetAS6C6416-55BINTR Datasheet/PDF
Quantity: 1000
2000 +: $ 12.46270
Stock 1000Can Ship Immediately
$ 13.71
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM
Memory Size: 64Mb (4M x 16)
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-LFBGA
Supplier Device Package: 48-TFBGA (8x10)
Description

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AS6C6416-55BINTR Application Field and Working Principle

AS6C6416-55BINTR is commonly used for mobile phones, digital cameras, digital TVs and other electronic products such as intelligent devices. It is a memory chip, specifically a SRAM, that is package-integrated with a logic circuit. The logic circuit mainly provides extended address and data buses together with the standard gates needed. Its working principle is based on an asynchronous static RAM. In this type of static RAM, a full memory cell is composed of four transistors and one capacitor. The operation of the cell is based on the concept of storing voltage. The chip is operated by a write/read circuit and three-state outputs which allow the chip to communicate directly with the data buses.

Characteristics of AS6C6416-55BINTR

Memory Size: 64Kx16Organization: 8MB × 8Address Space: 16 bitAddress Refresh: Self RefreshTime: 50nsPackage: 28-pin SOJ (600 mils)Construction: CMOSStandby Current: 420µALow-Voltage Operation: 2.8V (min)Maximum Clock Frequency: 70MHzDimension: 6.8mm ×13mmUnder Voltage Protection: 2.2V±10%Configurations: Per Chip 16Kx16

Features of AS6C6416-55BINTR

The AS6C6416-55BINTR offers plenty of features, including:

  • Low power consumption, which can significantly extend battery life.
  • High speed operation, enabling quick access to data.
  • Wide operating voltage range, allowing the SRAM to function effectively over a wide range of voltages and temperatures.
  • High noise immunity, reducing the chance of errors, ensuring data integrity.
  • Possibility of address and data multiplexing, allowing for cost savings in designs where it supports multiple data lines.
  • Compatibility with other devices and CPUs, due to its high-speed bus connection, reduced number of parts, and power saving design.
  • Flexible and reliable design, as its high speed operation, wide operating voltage and low power consumption offer design advantages.
  • Ideal for applications where low power draw, space savings, and speed are important.

Applications of AS6C6416-55BINTR

The AS6C6416-55BINTR can be found in many applications, such as:

  • Smart phones, tablets, and other mobile devices.
  • Digital cameras, digital televisions, and other multimedia devices.
  • Medical equipment.
  • Consumer electronics.
  • Industrial automation and robotics.
  • Automotive control systems.
  • Aerospace and defence equipment.

Conclusion

The AS6C6416-55BINTR is an ideal choice for applications that need high speed, low power consumption, and high noise immunity. Its wide range of applications and compatibility with other components make it ideal for many devices. It is also an excellent choice for applications that require space savings and reliability.

The specific data is subject to PDF, and the above content is for reference

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