AS6C8008A-45ZIN Allicdata Electronics
Allicdata Part #:

1450-1189-5-ND

Manufacturer Part#:

AS6C8008A-45ZIN

Price: $ 4.20
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC SRAM 8M PARALLEL 44TSOP II
More Detail: SRAM - Asynchronous Memory IC 8Mb (1M x 8) Paralle...
DataSheet: AS6C8008A-45ZIN datasheetAS6C8008A-45ZIN Datasheet/PDF
Quantity: 1495
1 +: $ 3.81780
10 +: $ 3.48327
25 +: $ 3.41687
50 +: $ 3.39356
135 +: $ 3.04420
270 +: $ 3.03252
540 +: $ 2.84323
1080 +: $ 2.72224
Stock 1495Can Ship Immediately
$ 4.2
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 8Mb (1M x 8)
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

AS6C8008A-45ZIN is a static RAM (SRAM) specifically designed to meet the fast access time, high performance requirements of modern low-cost, high-performance microprocessor-based systems. It offers a wide range of memory options that provide high quality and performance. As a standard type of SRAM, it is characterized by high speed, low cost and reliability. In this article, we will discuss the application field and working principle of AS6C8008A-45ZIN.

Application Field

The AS6C8008A-45ZIN is designed for use in a variety of applications and it is particularly suitable for fast access applications that require high speed, low power, and high reliability. It is popular in embedded systems and real-time applications such as industrial automation, medical, and aerospace. In addition, this device is a suitable choice for memory in high-end embedded designs including computing, process control, and data acquisition. In communications, this SRAM is ideal for routers, switches, base stations, and other networking solutions.

Working Principle

Internally, the AS6C8008A-45ZIN employs a CMOS technology, which guarantees high speed and low-power operation. The device uses a combination of latch-based memory cell and 6T memory cell to achieve the required data access time. Data is written and read from the device with an 8-bit wide data path. It offers an asynchronous read/write interface, allowing for fast and efficient data transfer. The AS6C8008A-45ZIN is organized as a x8 SRAM with a 4-word 4-bit deep decode circuit.

The AS6C8008A-45ZIN employs a synchronous access control with two write enable (WE) signals, two output enable (OE) signals, and one active low chip select (CS) signal. This enables faster chip selection and accommodation of more commands. The device provides power-on reset, high-voltage programming and software-programmable write protection capabilities.

In terms of power supply, AS6C8008A-45ZIN provides both single-voltage and either dual-voltage or triple voltage operation. The device has power-down capability, allowing it to enter a low-power standby mode when not in use, thus reducing total system power consumption. It also features built-in power-up reset circuitry and read/write boost function to support more intensive applications. Overall, it has an operating temperature range from -40 to 85degreeC.

In conclusion, the AS6C8008A-45ZIN is an ideal memory solution for embedded and real-time applications where fast access, low power, and high reliability requirements need to be met. It provides a wide range of memory options, which can be tailored to suit the specific applications needs. Its low-cost and easy-to-use features make it a popular choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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