AS6C2016-55ZIN Allicdata Electronics
Allicdata Part #:

1450-1025-ND

Manufacturer Part#:

AS6C2016-55ZIN

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC SRAM 2M PARALLEL 44TSOP II
More Detail: SRAM - Asynchronous Memory IC 2Mb (128K x 16) Para...
DataSheet: AS6C2016-55ZIN datasheetAS6C2016-55ZIN Datasheet/PDF
Quantity: 6348
Stock 6348Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 2Mb (128K x 16)
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II
Description

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AS6C2016-55ZIN is a 16K x 8 dynamic random access memory (DRAM) in a 8-pin SOP (Small Outline Package). It is mostly used in data and audio applications, such as cellular phones, personal digital assistants, audio players, and digital cameras. Its use has increased due to the increasing demand of devices with lower power consumption and higher integration in a smaller form factor.

Functionally speaking, a dynamic random access memory (DRAM) is a type of random access memory (RAM) that stores each bit of data in a memory cell, which is made up of an MOS transistor and a capacitor. The capacitor is used to hold the data while the transistor is responsible for reading and writing the data. To read or write a bit, the data has to be loaded into or unloaded from the capacitor.

The key feature of DRAM is the refresh cycle. A refresh cycle is when the DRAM repeatedly reads and writes each data bit, ensuring that the charge stored in the capacitor does not leak away. Without this refresh cycle, data stored in the memory would eventually be lost. The refresh cycle is accomplished using the AS6C2016-55ZIN\'s auto-refresh circuitry.

When it comes to integrating DRAM, DRAM interface solutions are provided by a number of vendors. AS6C2016-55ZIN is available with an interface solution from Alliance Memory, Inc., a leading supplier of memory solutions, which includes a low-power self-refresh controller and an 8-bit multiplexed address/data bus interface.The self-refresh controller continuously monitors the AS6C2016-55ZIN\'s operating status, and refreshes the array automatically, thus allowing the system to operate in low-power consumption states.

The system is equipped with numerous features, such as power-down, power-saving mode, and suspend mode to reduce power consumption. The suspend mode also reduces system noise as it allows the DRAM to enter a power-down mode in which all operations and accesses to the array are suspended. What\'s more, the system can support programmable burst lengths from 1 to 8 cycles.

In conclusion, AS6C2016-55ZIN is an ideal choice for designers running applications requiring low-power consumption and space-saving solutions. Its robust interface solution and extensive power management features make it a good choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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