AS6C62256-55SCNTR Allicdata Electronics

AS6C62256-55SCNTR Integrated Circuits (ICs)

Allicdata Part #:

AS6C62256-55SCNTR-ND

Manufacturer Part#:

AS6C62256-55SCNTR

Price: $ 1.04
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC SRAM 256K PARALLEL 28SOP
More Detail: SRAM - Asynchronous Memory IC 256Kb (32K x 8) Para...
DataSheet: AS6C62256-55SCNTR datasheetAS6C62256-55SCNTR Datasheet/PDF
Quantity: 1000
1000 +: $ 0.94303
Stock 1000Can Ship Immediately
$ 1.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 256Kb (32K x 8)
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.330", 8.38mm Width)
Supplier Device Package: 28-SOP
Description

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The AS6C62256-55SCNTR is an integrated CMOS memory device and is an essential tool for embedded designers. The AS6C62256-55SCNTR is a low-power, self-timed Refresh DRAM that delivers the highest level of performance and reliability.

This device is designed to occupy minimal board space while providing reliable and efficient access to data and program information. The AS6C62256-55SCNTR also combines an SRAM-on-Chip feature, allowing high throughput operations and significant reduction in power consumption.

The AS6C62256-55SCNTR application field covers a wide range of products, including embedded and portable systems, networked Intelligent Appliance (IA) controllers, HPCs and Supercomputers, human interface systems (HISs), mobile devices, and other memory-intensive embedded applications.

One of the features of the AS6C62256-55SCNTR is its high data throughput rate. This device supports up to 72Mbits/second continuous data access, allowing fast performance without compromising quality or reliability. This device is also characterized by lower power consumption, thanks to its low standby current of less than 100mV, and by its reduced failure rate, making it suitable for mission-critical applications.

The AS6C62256-55SCNTR also has the ability to store more data and address more complex operations, making it ideal for any application needing large amounts of data storage. With its self-timed Refresh DRAM architecture, the AS6C62256-55SCNTR provides higher performance compared to traditional DRAMs.

In order to take advantage of the full capabilities of the AS6C62256-55SCNTR, users need to understand its working principle. The AS6C62256-55SCNTR works on the basis of temporally distributed SRAM cells, with access to each cell occurring in a fixed amount of time. The device can store up to 64k words of instruction memory, or up to 2M bits of data memory. Each cycle begins with a write or a read command, and the data stored in each cell is then accessed for processing.

The AS6C62256-55SCNTR is optimized for incorporating high speed interfaces and includes an advanced address multiplexing feature for simultaneous operation of multiple memories. The device also provides several control signals and a bus control register, to allow easy interfacing. Additionally, since the device operates at low voltage, it is ideal for small mobile systems with battery-powered applications.

The AS6C62256-55SCNTR is engineered to meet the demands of modern embedded designs. Its low power consumption, self-timed Refresh DRAM, and high data throughput are not only designed to maximize performance and reliability, but also to keep board space usage to a minimum.

The specific data is subject to PDF, and the above content is for reference

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