AS6C4008-55ZINTR Allicdata Electronics
Allicdata Part #:

AS6C4008-55ZINTR-ND

Manufacturer Part#:

AS6C4008-55ZINTR

Price: $ 2.14
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC SRAM 4M PARALLEL 32TSOP II
More Detail: SRAM - Asynchronous Memory IC 4Mb (512K x 8) Paral...
DataSheet: AS6C4008-55ZINTR datasheetAS6C4008-55ZINTR Datasheet/PDF
Quantity: 1000
1000 +: $ 1.94084
Stock 1000Can Ship Immediately
$ 2.14
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (512K x 8)
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Supplier Device Package: 32-TSOP II
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

AS6C4008-55ZINTR is a kind of memory belonging to the Analog and Mixed-Signal family of products. It is a 64K x 8, High-Performance CMOS Static RAM fabricated using a dielectric isolation, tri-gate process. It is designed for the most demanding applications requiring low-power dissipation, read/write cycles, and working temperatures. It is suitable for applications that require high performance, such as networking, telecommunications, data storage, and industrial control.

The AS6C4008-55ZINTR is organized as 64K words of 8 bits each. It is available in a variety of memory configurations, including 32K x 16, 32K x 8, 16K x 8, 8K x 8, and 4K x 8. It has a powerful instruction set, including both read and write cycles, with separate specified read and write parameters. It also offers separate interrupt outputs that can be used for processor-to-processor communications or system automation.

For applications such as embedded control systems that require very low power consumption, the AS6C4008-55ZINTR memory is designed to meet stringent power requirements. It has an active current of 5mA and a standby current of 1mA. It also has an extremely low input leakage of 8nA at the lowest operating temperature. The CMOS process used to fabricate the memory cell ensures that the device is immune to latch-up.

The AS6C4008-55ZINTR features multiple registers and a variety of timing modes. The user can choose between 0, 1, 2 and 3 wait states, each with their own unique timing characteristics. The user can select from a variety of write/read modes, including synchronous, asynchronous, and random access. This allows the user to tailor the memory access to their application’s needs.

The AS6C4008-55ZINTR is the perfect choice for applications that require high-speed, low-power, and reliable memory access. Its advanced instruction set, power consumption levels, and multiple timing modes make it the ideal choice for a wide variety of applications. Its small form factor and environmental robustness make it suitable for a wide range of embedded systems. And its wide array of configuration options give the user the flexibility to customize their memory access to fit the demands of their system.

The specific data is subject to PDF, and the above content is for reference

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