AS6C4016A-45ZINTR

The AS6C4016A-45ZINTR is a 16K Static RAM (SRAM) organized as 2048 words by 8 bits. This device is an advanced low-power CMOS static RAM manufactured by Alpha and Omega Semiconductor, Inc. It is optimized for use in a wide variety of system applications, including embedded control, data logging, medical instrumentation, automotive, and numerous portable battery-powered applications. The device is available in a space-saving, easy-to-use, narrow 6-Lead Thin Small Outline Package (TSOP-6) measuring just-0.6mm wide by 3.2mm long, making it ideal for designs where space is at a premium.

The AS6C4016A-45ZINTR has an operating power supply voltage range of 3.0V to 3.6V and can operate in temperatures up to +85°C. This 16K-bit SRAM features fast access times of 45ns, and supports both random and burst access modes. It also features an auto-precharge SRAM on-chip, which enables the AS6C4016A-45ZINTR to achieve extended read/write cycles (up to 10 million) while consuming minimal power.

Ideal applications for this device include multiprocessing systems, real-time data logging, real-time microcontroller systems, and applications where power savings are a priority. The AS6C4016A-45ZINTR is fully read/write compatible with TMS6C4016B-48L and other 16Kbit SRAM devices.

Working Principle of AS6C4016A-45ZINTR

The AS6C4016A-45ZINTR has a simple 16K-bit CMOS static RAM structure (Figure 1) consisting of a row decoder and a Column Decoder. The information is stored in the form of logic ones and zeros in SRAM cells in each of 2048 "rows" and eight “columns”. The row decoder receives an 18-bit row address and selects one of the 2048 "rows" and the column decoder receives an 8-bit column address and selects one of the 8-bits stored in the selected "row."

The AS6C4016A-45ZINTR is organized as 2048 x 8 bits and equipped with "-CS", "-WE", "-OE", "-RI", "-R/B" and eight address terminals (A0-A7). The row and column addresses are latched into the Row Address and Column Address registers by the rising edge of "-CS". The "-RI" pin is used for memory reset. When it is low, all address registers are reset and all data in the memory array is set to "0". When "-WE" is low and "-OE" is high, the data inputs are latched into the selected location in the array. When "-WE" is high and "-OE" is high, the contents of the array are output at the DQ pins.

The AS6C4016A-45ZINTR supports both random and burst access modes. The random access mode allows the user to access any location in the array by supplying a row address and a column address to the address inputs. Burst access allows the user to access multiple consecutive locations in the array in sequence with a single row address and a single column address. All consecutive locations following the initial location are accessed with only the rising edge of "-R/B". The AS6C4016A-45ZINTR features an auto-precharge SRAM on-chip, which allows the device to achieve longer read/write cycles while consuming minimal power.

Conclusion

The low-power, space-saving AS6C4016A-45ZINTR SRAM from Alpha and Omega Semiconductor is a great choice for applications where power savings are a priority and space is at a premium. With its fast access times and support for both random and burst access modes, the AS6C4016A-45ZINTR is ideal for embedded control, data logging, medical instrumentation, automotive, and numerous portable battery-powered applications.