Allicdata Part #: | BF240_J35Z-ND |
Manufacturer Part#: |
BF240_J35Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS RF NPN 40V 50MA TO-92 |
More Detail: | RF Transistor NPN 40V 50mA 1.1GHz 350mW Through Ho... |
DataSheet: | BF240_J35Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Frequency - Transition: | 1.1GHz |
Noise Figure (dB Typ @ f): | -- |
Gain: | -- |
Power - Max: | 350mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 65 @ 1mA, 10V |
Current - Collector (Ic) (Max): | 50mA |
Operating Temperature: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | BF240 |
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The BF240_J35Z is a bipolar (BJT) transistor used for RF applications. This article will describe the application field and working principle of this transistor.
The BF240_J35Z is a transistor with a high-frequency, low-noise and low-current capacity, making it suitable for use in a wide variety of RF applications, including radio frequency switching, amplification, and frequency conversion. This transistor is also useful for automotive electronics, military and aeronautical equipment, sonar, test and measurement equipment, and consumer electronics.
One of the most important characteristics of the BF240_J35Z is its amplification and frequency conversion function. This means that the transistor can be used as a signal amplifier and signal mixer. This is because the transistor has a very high gain-bandwidth product, meaning that it can amplify and mix signals with very high frequency. This helps to reduce signal distortion and improve the signal-to-noise ratio.
The BF240_J35Z also has a wide dynamic range, which allows for greater control over the output signal. This means that it can be used with a variety of input signals, making it suitable for use in many different applications. The transistor also has a low noise figure and a low power consumption, which makes it an ideal choice for portable devices and applications where low power consumption is a priority.
The working principle of the BF240_J35Z is based on the principle of bipolar junction transistor (BJT) operation. The BJT is formed by joining two diodes in series, with one of them being N-type and the other being P-type. The BJT acts like a switch, and when a current passes through it, the current will flow under the control of a base-emitter voltage. This voltage controls the current flow and the amount of current that the transistor can handle.
The base-emitter voltage is determined by the biasing of the BJT, which is done by placing a voltage source between the base and the emitter. This voltage source is used to control the base-emitter voltage, and in turn, the amount of current that is allowed to flow through the transistor. By controlling the biasing of the BJT, the transistor\'s characteristics such as gain and frequency response can be adjusted.
The BF240_J35Z is a versatile transistor that can be used in a wide range of RF applications. Its wide dynamic range, high gain-bandwidth product and low power consumption make it an ideal choice for a variety of different applications. With its excellent characteristics, this transistor is sure to remain a popular choice among engineers and hobbyists alike.
The specific data is subject to PDF, and the above content is for reference
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