BF245A_D27Z Allicdata Electronics
Allicdata Part #:

BF245A_D27Z-ND

Manufacturer Part#:

BF245A_D27Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: JFET N-CH 30V 6.5MA TO92
More Detail: RF Mosfet N-Channel JFET TO-92-3
DataSheet: BF245A_D27Z datasheetBF245A_D27Z Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: N-Channel JFET
Frequency: --
Gain: --
Current Rating: 6.5mA
Noise Figure: --
Power - Output: --
Voltage - Rated: 30V
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: BF245
Description

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BF245A_D27Z is a type of field effect transistor (FET), which is mainly used for radio frequency (RF) applications. It has a number of unique features that help it stand out from other types of FETs. Its low noise characteristics make it ideal for low noise amplifiers and its wide bandwidth make it suitable for wideband applications. Its high gain and fast switching speeds make it ideal for use in RF applications.

The BF245A_D27Z is a N-channel enhancement mode FET, which means it requires a positive gate-source voltage to be turned on. It is available in a TO-92 or a SMD package, which makes its installation easy in different types of designs. It is also available in different resistances, such as 4.7, 10, and 20 ohms.

The working principle of the BF245A_D27Z is relatively simple. It operates by using an electric field to keep a channel open between two electrodes. A positive voltage applied to the gate electrode creates an electric field, which draws electrons away from the source electrode, creating an open channel between source and drain electrodes. By varying the voltage between the gate and drain electrodes, the resistance between the source and the drain electrodes can be varied, allowing the FET to act as an amplifier or an attenuator.

One of the main advantages of the BF245A_D27Z is its low power consumption. It is also very popular for its ability to operate over a wide temperature range, from -55 to +150 degrees Celsius. This makes it ideal for a variety of applications, including high-end audio systems, and automotive applications.

The BF245A_D27Z has many uses in RF applications, including but not limited to radio receivers and amplifiers, mixers, and filters. It is used in RF amplifiers where its wide bandwidth allows for a wide range of frequencies to be amplified, and in mixers and filters due to its low noise and high gain characteristics. It is also used in high-end audio equipment, as it is able to amplify audio signals without introducing any unwanted noise or distortion.

The BF245A_D27Z is an excellent option for designs that require a fast switching and low noise transistor. Its low power consumption, wide temperature range, and wide bandwidth make it suitable for a range of RF applications, from filters to high-end audio. Its reliable performance and easy installation make it a popular choice for engineers working on RF amplifiers, mixers, and filters.

The specific data is subject to PDF, and the above content is for reference

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