Allicdata Part #: | BF240FS-ND |
Manufacturer Part#: |
BF240 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANSISTOR RF NPN 40V 50MA TO-92 |
More Detail: | RF Transistor NPN 40V 50mA 1.1GHz 350mW Through Ho... |
DataSheet: | BF240 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Frequency - Transition: | 1.1GHz |
Noise Figure (dB Typ @ f): | -- |
Gain: | -- |
Power - Max: | 350mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 65 @ 1mA, 10V |
Current - Collector (Ic) (Max): | 50mA |
Operating Temperature: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | BF240 |
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BF240 is one of the most widely used RF transistors in the radio frequency industry. It is a small signal NPN (negative-positive-negative) bipolar junction transistor (BJT), which is designed for use in high-frequency applications in the frequency range from 30 MHz to 500 MHz. It is an ideal choice for applications such as audio amplifiers, switches, and mixer stages. This article will discuss the application field and working principles of the BF240.
The BF240 is a high-performance RF transistor that is manufactured with different types of semiconductor physical structures, such as planar structures and mesa structures. This feature enables the BF240 to have excellent RF characteristics, such as large current gain, wide gain bandwidth, and high power output. The BF240 has an emitter-base breakdown voltage of 40V, which means that it can be used in high-voltage circuits.
The BF240 also features a low thermal resistance that enables it to be used in high-temperature applications. Its small size and high power output make it suitable for use in high-frequency applications. The BF240 also has excellent low-power performance, which is achieved by using low-noise transistors and low distributed capacitance. In addition, its low power-consumption makes it ideal for battery-operated applications.
The working principle of the BF240 is based on the junction of two types of doped semiconductor materials, one type of which is P-type and another one is N-type. This junction produces a junction potential, which is known as potential barrier. As electrons move through this potential barrier, they impart energy to the junction. This energy is then converted into current, which is then passed through the transistor\'s collector, base, and emitter terminals.
The BF240 is mainly used in radio frequency (RF) applications. It is used in amplifiers, modulators, and switches. In amplifiers, the BF240 is used in high-power, high-frequency amplifier stages. It is also used in low-noise amplifier stages. In modulators, the BF240 is used for modulating signals for radio frequency receivers and transmitters. In switches, the BF240 is used to control the flow of current between the collector and the emitter.
The BF240 works by amplifying the signal voltage, which is then passed from the collector to the emitter terminals. This voltage is then used to control the collector current, which is the current that flows through the transistor. The current is then passed from the collector to the emitter terminals, and the resulting current determines the transistor\'s state. The transistor can be used to switch signals on and off, or regulate the amount of current that flows through it.
The BF240 is a versatile device that is suitable for a wide range of applications. It has excellent RF characteristics, low power consumption, and low thermal resistance. It can be used in high-frequency amplifier stages, low-noise amplifiers, modulators, and switches. It is also suitable for battery-operated applications. With all these features, the BF240 is truly a versatile device that can be used in a wide variety of applications.
The specific data is subject to PDF, and the above content is for reference
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