Allicdata Part #: | BF245A_D75Z-ND |
Manufacturer Part#: |
BF245A_D75Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | JFET N-CH 30V 6.5MA TO92 |
More Detail: | RF Mosfet N-Channel JFET TO-92-3 |
DataSheet: | BF245A_D75Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | N-Channel JFET |
Frequency: | -- |
Gain: | -- |
Current Rating: | 6.5mA |
Noise Figure: | -- |
Power - Output: | -- |
Voltage - Rated: | 30V |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | BF245 |
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The BF245A_D75Z is a type of field-effect transistor (FET). It is a metal-oxide-semiconductor field-effect transistor (MOSFET) designed specifically for use in RF (radio frequency) applications. This article will discuss the working principle and application field of the BF245A_D75Z.
The BF245A_D75Z is a three-terminal FET, consisting of a source, gate, and drain. It utilizes a gate material that is usually a metal oxide (doped silicon dioxide). When a voltage is applied to the gate, it acts as an insulator. This has the effect of reducing the current flow from the drain to the source by producing a "gate voltage." As the gate voltage increases, the amount of current flowing through the FET decreases.
The working principle of the BF245A_D75Z is based on the same principles of regular transistors. When an electric field is applied to the gate, it creates an "electron barrier" which controls the amount of current flowing between the drain and the source. The resulting reduction in current makes it possible for the BF245A_D75Z to amplify weak signals or to act as a switch.
In terms of application field, the BF245A_D75Z can be used in a variety of RF applications, including radios and other wireless communication devices. These devices usually utilize the BF245A_D75Z to amplify weak signals and control the output power. The transistor is also widely used in computer and consumer electronics, such as printers and DVD players.
The BF245A_D75Z is capable of offering excellent performance characteristics such as low noise, high speed switching, low power dissipation, and immunity to electromagnetic interference. These characteristics make it ideal for use in a variety of RF applications.
In conclusion, the BF245A_D75Z is a type of field-effect transistor specifically designed for RF applications. It utilizes a metal oxide gate material to control the amount of current flowing between the drain and source. The BF245A_D75Z has excellent performance characteristics and is widely used in radio and other wireless communication devices, as well as consumer electronics.
The specific data is subject to PDF, and the above content is for reference
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