Allicdata Part #: | BF244C_J35Z-ND |
Manufacturer Part#: |
BF244C_J35Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | JFET N-CH 30V 50MA TO92 |
More Detail: | RF Mosfet N-Channel JFET 15V 100MHz TO-92-3 |
DataSheet: | BF244C_J35Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | N-Channel JFET |
Frequency: | 100MHz |
Gain: | -- |
Voltage - Test: | 15V |
Current Rating: | 50mA |
Noise Figure: | 1.5dB |
Power - Output: | -- |
Voltage - Rated: | 30V |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | BF244 |
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BF244C_J35Z is a n-channel junction field effect transistor (JFET). It is designed for use in amplifier, oscillator, mixer and switching circuits. It can be used in radio frequency (RF) applications, such as AM, FM, SSB and television.
A JFET operates on the principle of minority charge carriers in a semiconductor material. It is a type of field effect transistor (FET) that controls the flow of electric current by using an electric field. The majority charge carriers, or electrons, of the device are blocked from flowing and the only source of current is from the minority carriers, or holes. The majority charge carriers are the electrons that are already existing in the semiconductor material.
The JFET works by controlling the number of majority charge carriers in the channel of the device. The majority charge carriers in the channel create a depletion region which is an area with a very low density of charge carriers. This depletion region is created when the gate terminal of a JFET is biased at a negative voltage relative to the source terminal. The negative voltage causes the majority charge carriers to be repelled from the source terminal and move away from the drain terminal.
In a BF244C_J35Z, the JFET operates by allowing a small amount of current to flow through the channel between the source and drain terminals. When the gate voltage is applied, the depletion region extends across the entire device and the majority charge carriers are repelled from the source and the drain. This produces an electric field which in turn controls the flow of current.
A BF244C_J35Z offers a variety of features that make it ideal for use in RF applications. It has an incredibly low on-resistance and high gain, and is also very low-noise. Additionally, it features low capacitance and high input impedance, making it well-suited for use in high-frequency applications. This makes the device ideal for use in amplifier, oscillator, mixer and switching circuits.
The JFET is also extremely robust and can handle large amounts of power without any degradation. Additionally, the device is very linear and has a low distortion and high frequency response. This allows the JFET to be used in a wide variety of applications and makes it ideal for a number of different RF applications.
In conclusion, the BF244C_J35Z is an ideal device for use in amplifier, oscillator, mixer and switching circuits. The device can be used in a variety of RF applications, such as AM, FM, SSB and television. It offers a range of features that make it suitable for use in RF applications, such as low capacitance, high gain, low noise and high input impedance. Additionally, the device is robust, linear and can handle large amounts of power without any degradation.
The specific data is subject to PDF, and the above content is for reference
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