Allicdata Part #: | BF240_ND74Z-ND |
Manufacturer Part#: |
BF240_ND74Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANSISTOR RF NPN 40V 50MA TO-92 |
More Detail: | RF Transistor NPN 40V 50mA 1.1GHz 350mW Through Ho... |
DataSheet: | BF240_ND74Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Frequency - Transition: | 1.1GHz |
Noise Figure (dB Typ @ f): | -- |
Gain: | -- |
Power - Max: | 350mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 65 @ 1mA, 10V |
Current - Collector (Ic) (Max): | 50mA |
Operating Temperature: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | BF240 |
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BF240_ND74Z is a type of NPN bipolar transistor. It is usually put into the RF (radio frequency) category because of its high frequency applications. This transistor is typically used in commercial, industrial and military electronics equipment like radio and TV broadcast transmitters, remote control circuits and telephone line amplifiers. It is also used in power amplifier stages of music and audio applications. The BF240_ND74Z is a common base, double diffused transistor and has many advantages such as high gain, low noise and high efficiency.
The BF240_ND74Z has a max collector current of 350mA. It has a maximum collector-emitter voltage of 30V, and a maximum base-emitter voltage of 60V. It also has a minimum hfe of 25. The maximum power dissipation is 500mW. The maximum operating frequency is 2.5GHz, so it is suitable for RF applications.
The working principle of the BF240_ND74Z is based on the base-collector junction and base-emitter junction. A base-collector junction is a p-n-p junction, where the p-type layer is the base and the n-type layer is the collector, and the associated depletion region between them is the base-collector junction. Similarly, the base-emitter junction is an n-p-n junction, where the n-type layer is the base and the p-type layer is the emitter, and the associated depletion region between them is the base-emitter junction. The base-emitter junction is also called the active region, and it is this region where the majority of current flow takes place.
The operating principle of the BF240_ND74Z is simple – when the base-emitter junction is forward biased, it allows current to flow from the emitter to the collector. This is because the higher voltage in the base-emitter results in an electrons drift through the base-collector junction into the collector region, which then results in the generation of current. This current is modulated by the base current, which is regulated by the base-emitter junction voltage.
The BF240_ND74Z is very useful in RF applications because it has a wide frequency range and its high gain also makes it suitable for high-power amplifiers. It is also popular for its low noise characteristics, making it a great choice for RF applications such as radio broadcast transmitters and high-power telephone line amplifiers.
In conclusion, the BF240_ND74Z is a reliable, powerful and efficient high-frequency NPN transistor. Its wide range of applications makes it the perfect choice for many RF applications, and its low noise characteristics make it very popular for sensitive applications such as radio broadcast transmitters. It is also commonly used in power amplifiers for music and audio applications. The operating principle of the BF240_ND74Z revolves around its base-collector and base-emitter junctions, and these regions determine the amount of current that is generated. It is a great choice for high-frequency applications, and its low noise characteristics make it suitable for radio broadcast transmitters and telephone line amplifiers.
The specific data is subject to PDF, and the above content is for reference
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