BF245C_D26Z

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

BF245C_D26Z Application Field and Working Principle

The BF245C_D26Z is an N-channel dual gate MOSFET which is used in radio frequency (RF) applications. It is a two port transistor which has a gate input, drain and source. This FET is designed for use in small-signal amplifiers and is particularly well suited for use in low noise amplifier applications.

This FET has a maximum drain–source voltage of 36 V, a relatively high transconductance of 18 mS and a low input capacitance of 2.5 pF. It also has a modest noise figure of 4.5 dB and is well suited for use in differential amplifier circuits. Furthermore, the dual gate construction of this FET allows for a very linear response over a wide range of frequencies, making it an ideal choice for applications where linearity is paramount.

When it comes to the operation of this FET, it is built around a conductive substrate. The substrate is insulated and has two top electrodes which control the conductivity of the transistor. An input voltage and/or current drives the gates, resulting in the electrode being given a potential difference. This potential difference is then translated into a drain-source current, depending on the size of the input voltage/current. This enables the transistor to regulate the amount of current either between the drain and source, or comes out of the drain.

The BF245C_D26Z can be used in many different kinds of applications. It is suitable for use in soft radio frequency (RF) components such as filters, mixers, oscillators and amplifiers. Additionally, this FET can be used for low noise applications such as low noise amplifiers and for audio tasks such as amplifying microphone signals. Its low noise figure also makes it a great choice for broad band amplifiers, making it an incredibly versatile semiconductor.

Apart from its many applications, the BF245C_D26Z is also noted for its high performance and reliability, making it a trustworthy choice for your projects and applications. Additionally, the BF245C_D26Z is easy to use, with its dual gate construction making it suitable for use in a wide range of circuits. On top of that, the low input capacitance of this FET simplifies the PCB design, saving time in development.

Conclusion

In conclusion, the BF245C_D26Z is an incredibly versatile FET which can be used in many different RF and audio applications. It enables linear response over a wide range of frequencies, has a low input capacitance and has a low noise figure. On top of that, it is noted for its high reliability and performance. If you’re looking for a reliable and versatile FET, the BF245C_D26Z is a great choice.

The specific data is subject to PDF, and the above content is for reference