BF246B_J35Z

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BF246B_J35Z is a n-channel junction FET (JFET), commonly used for switching and signal amplifying. It is built with features to support applications in both low-level signal conditioning and power switching, making it one of the most versatile and widely used JFET devices on the market.

The BF246B_J35Z operates like any other JFET in that it uses an insulated gate field-effect transistor to control the flow of current. When voltage is applied to the gate, an electric field is generated, which draws electrons away from the source side of the channel and allows current to flow across the channel. The amount of current that flows depends on the voltage applied to the gate.

The basic principle of operation of a JFET is the same regardless of its application. What sets the BF246B_J35Z apart from other JFETs is its wide range of features and capabilities. For example, the device has a drain-source on-resistance (Ron) of just 9 ohms and a gate-source breakdown voltage (BVgs) of up to +/- 30 volts. These features make it suitable for low-level signal conditioning applications, such as instrumentation amplifiers and audio amplifiers.

The BF246B_J35Z also has a maximum drain current rating of 1.5 amps. This makes it suitable for power switching applications, such as load switch and motor control. The device also has a maximum frequency of 200 MHz, making it suitable for RF applications.

In summary, the BF246B_J35Z is a n-channel junction field-effect transistor that has a wide range of features and capabilities that make it suitable for both low-level signal conditioning applications and power switching applications. It is one of the most versatile and widely used JFET devices available and is sure to meet the needs of any application.

The specific data is subject to PDF, and the above content is for reference