BF245A,126

Series:	--
Packaging:	Tape & Box (TB)
Part Status:	Obsolete
Transistor Type:	N-Channel JFET
Frequency:	100MHz
Gain:	--
Voltage - Test:	15V
Current Rating:	6.5mA
Noise Figure:	1.5dB
Power - Output:	--
Voltage - Rated:	30V
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package:	TO-92-3
Base Part Number:	BF245

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Article

BF245A,126 Application Field and Working Principle

Application FieldThe BF245A,126 is a voltage-controlled 2N channel enhancement mode field effect transistor (FET). It has a wide range of applications, including audio processing circuits, computer circuits, measurement and control systems, telecommunication devices, and linear power amplifiers.Working PrincipleThe BF245A,126 is an N-channel enhancement mode field effect transistor. It has an enhancement mode of operation, meaning that it is normally in a "OFF" state. The transistor’s gate is insulated from the source and drain terminals, and a voltage applied to the gate will modulate the charge carriers of the source and drain junctions. By varying the gate voltage, a certain amount of current will be allowed to flow through the transistor. The voltage controlling action of the BF245A,126 is based on the principle that the magnitude of the current flowing into the drain depends on the gate-source voltage (VGS). The FET will enter an ohmic range of operations when the voltage applied to the gate is greater than the pinch-off voltage (Vp), allowing current to flow through the Channel. When the gate-source voltage is below the pinch-off voltage, no current will flow through the Channel.AdvantagesThe major advantage of the BF245A,126 transistor is its low current-to-voltage conversion ratio which results in a low on-state resistance. This low resistance reduces power dissipation, making the devices ideal for linear power amplification. In addition, the devices offer high voltage breakdown capabilities, low drain-source leakage current, and good noise immunity. The devices are very reliable and long life due to the low power dissipation. The compact packaging also makes it ideal for a wide range of applications.ConclusionThe BF245A,126 is an N-channel enhancement mode field effect transistor with a wide range of applications, from audio processing to linear power amplification. The devices offer high voltage breakdown capabilities, low drain-source leakage current, and good noise immunity. These features make the BF245A,126 ideally suited for linear power amplification and other favorable applications.

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