BF244B Discrete Semiconductor Products |
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Allicdata Part #: | BF244B-ND |
Manufacturer Part#: |
BF244B |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | JFET N-CH 30V 50MA TO92 |
More Detail: | RF Mosfet N-Channel JFET 15V 100MHz TO-92-3 |
DataSheet: | BF244B Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | N-Channel JFET |
Frequency: | 100MHz |
Gain: | -- |
Voltage - Test: | 15V |
Current Rating: | 50mA |
Noise Figure: | 1.5dB |
Power - Output: | -- |
Voltage - Rated: | 30V |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | BF244 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BF244B is a field effect transistor (FET) that is well-suited for use in various types of radio frequency (RF) applications. These FETs are manufactured by Toshiba, with a nominal drain-source voltage of around 30V and an maximum drain-source current of 0.95A. These FETs have a small form factor and are designed for use in low-voltage, low-power applications, making them ideal for many types of RF projects.
When used in an RF application, FETs are used to amplify small signals and control power states. As a transconductance device, the BF244B amplifies small input signals and outputs a larger one that is ideally suited for powering amplifiers and modulators. As a result, it is suitable for use in amplifiers, modulators, and switching circuits. It is also commonly used in a variety of consumer electronics, such as televisions, radios, CB radios, and sound systems.
The working principle of the BF244B is based on the effect of electric fields on semiconductors. These electric fields affect the mobility of electrons, allowing them to move freely from one contact to another. As the electric field increases, more electrons are pulled in, resulting in an amplified signal. Conversely, as the electric field decreases, fewer electrons are pulled in, resulting in a weaker signal.
When the source and drain contacts of the BF244B are connected to a voltage source, an electric field is created. This electric field affects the mobility of electrons across the device, resulting in amplification or attenuation of the incoming signal, depending on the magnitude of the electric field. The addition or subtraction of electrons to the gate terminal controls the electric field, and hence, the amplification or attenuation of the signal.
The BF244B has the ability to detect small input signals and amplify them considerably, making it ideal for a wide range of RF applications. Additionally, it is highly reliable and supplies consistent performance, even when temperatures are extreme. This FET is also relatively inexpensive and readily available, making it an attractive option for RF circuit design.
In conclusion, the BF244B is a FET that is ideally suited for use in a variety of radio frequency applications. Its ability to detect and amplify small input signals, as well as its reliability and affordability, make it an attractive choice for those designing RF circuits.
The specific data is subject to PDF, and the above content is for reference
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BF245C_D26Z | ON Semicondu... | 0.0 $ | 1000 | JFET N-CH 30V 25MA TO92RF... |
BF245C_D27Z | ON Semicondu... | 0.0 $ | 1000 | JFET N-CH 30V 25MA TO92RF... |
BF245C_D75Z | ON Semicondu... | 0.0 $ | 1000 | JFET N-CH 30V 25MA TO92RF... |
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BF244C_J35Z | ON Semicondu... | 0.0 $ | 1000 | JFET N-CH 30V 50MA TO92RF... |
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BF245B_J35Z | ON Semicondu... | 0.0 $ | 1000 | JFET N-CH 30V 15MA TO92RF... |
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