BF240,112

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The BF240,112 is a Silicone NPN Silicon Junction Transistor suitable for use in RF amplifiers. It is designed to operate in the frequency range of 0.2 MHz to 3 GHz. It is a bipolar junction transistor, meaning that it utilizes both electrons and holes in its operation. The BF240,112 has a collector-emitter voltage of 60V and a collector-base voltage of 70V making it suitable for use in high-power applications. It has a maximum current rating of 150mA, making it well suited for amplifying high-frequency signals.

The device has an SOT-23 package style and measures 1.477” x 1.039” x 0.272”. The BF240,112 uses an NPN substrate construction and is designed to deliver exceptional performance in a variety of RF amplifier circuits. It also features excellent gain linearity, making it suitable for use in high-precision applications. It has dimensions of 1.5 by 1 by 0.276 inches (38.1 x 25.4 x 7 mm) and is rated for use at temperatures between -55 and +150 degrees Celsius.

The typical noise level for the BF240,112 is 1.15 dB at 1GHz. The transistor has excellent gain linearity and conforms to JEDEC standards. Its high fT (390MHz) makes it suitable for use in wideband amplification applications. Additionally, the transistor has exceptional input--output isolation, making it ideal for operating in radio frequency (RF) amplifiers.

The operations of a bipolar junction transistor (BJT) is based on the transistor action where the behavior of its emitter-base junction before and after the formation of p-n junction is taken into account. It works by allowing current to flow in the collector-base circuit when the base-emitter junction is forward biased with a current. When the base-emitter junction is reverse biased, then no current will flow in the transistor. This is the basis for most of the transistor switching applications. BJTs are ideal for use in RF amplifiers as they have an advantage over FETs in that they can be used to amplify even very low-level signals.

The BF240,112 utilises an SOT-23 style package, which makes it ideal for use in a variety of RF amplifiers. It features excellent gain linearity, making it suitable for use in high-precision applications. Additionally, its low noise level of 1.15 dB at 1GHz and its high fT of 390MHz make it well-suited for wideband amplification. The device is also capable of withstanding temperatures of up to +150°C, making it suitable for many applications.

To summarise, the BF240,112 is a Silicone NPN Silicon Junction Transistor suitable for use in RF amplifiers. It has a collector-emitter voltage of 60V and a collector-base voltage of 70V, making it suitable for high-power applications. It also has a maximum current rating of 150mA, making it well suited for amplifying high-frequency signals. Furthermore, its low noise level, high fT and excellent gain linearity make it a suitable choice for many RF applications. Thus, the BF240,112 is an excellent choice for many RF amplifier applications.

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